AOL1702

AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50 60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
1000
2000
3000
4000
5000
6000
7000
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
Vds=15V
I
D
=20A
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1ms
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
10µs
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
D
.Z
θJC
.R
θJC
R
θ
JC
=2.6°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
40
60
80
100
120
0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
T
J(Max)
=175°C
T
C
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
40
80
120
160
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A), Peak Avalanche Current
T
A
=150°C
0
20
40
60
80
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
T
A
=25°C
0
20
40
60
80
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating I
D
(A)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0
20
40
60
80
100
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 50 100 150 200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
I
R
(A)
VDS=12V
VDS=24V
0
0.2
0.4
0.6
0.8
1
0 50 100 150 200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
V
SD
(V)
I
S
=1A
10A
20A
5A
0
10
20
30
40
50
60
0 5 10 15 20 25 30
Is (A)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Q
rr
(nC)
0
3
6
9
12
15
18
Irm (A)
di/dt=1000A/us
125ºC
125ºC
25ºC
25ºC
Qrr
Irm
0
3
6
9
12
15
0 5 10 15 20 25 30
Is (A)
Figure 20: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
trr (ns)
0
0.5
1
1.5
2
2.5
S
di/dt=1000A/us
125ºC
125ºC
25ºC
25ºC
trr
S
0
5
10
15
20
25
30
35
40
45
50
0 200 400 600 800 1000 1200
di/dt (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
(nC)
0
3
6
9
12
15
Irm (A)
125ºC
25ºC
25ºC
Is=20A
Qrr
Irm
0
3
6
9
12
15
18
21
24
27
0 200 400 600 800 1000 1200
di/dt (A)
Figure 22: Diode Reverse Recovery Time and
Soft Coefficient vs. di/dt
trr (ns)
0
0.5
1
1.5
2
2.5
S
125ºC
125ºC
25ºC
25ºC
Is=20A
trr
S
125º
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1702

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 30V 70A 8ULTRASO
Lifecycle:
New from this manufacturer.
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