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HMC415LP3ETR

P1-P3P4-P6P7-P9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 68
LINEAR & POWER AMPLIFIERS - SMT
Power Compression @ 5.2 GHz Output IP3 vs. Temperature
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature
0
4
8
12
16
20
24
28
32
36
-12-10-8-6-4-2024681012
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
34
36
38
40
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
18
19
20
21
22
23
24
25
26
27
28
2.7 3 3.3
Gain
P1dB
Psat
Gain (dB), P1dB (dBm), Psat (dBm)
Vcc Supply Voltage (Vdc)
-50
-40
-30
-20
-10
0
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 69
Gain, Power & Quiescent
Su
pply Current vs. Vpd @ 5.2 GHz
EVM vs. Temperature,
Icc = 240 mA, F = 5.2 GHz
EVM vs. Supply Current,
F = 5.2 GHz
0
1
2
3
4
5
6
7
8
10 11 12 13 14 15 16 17 18
Icc=160mA
Icc=200mA
Icc=240mA
Icc=280mA
ERROR VECTOR MAGNITUDE (%)
OUTPUT POWER (dBm)
0
1
2
3
4
5
6
7
8
10 11 12 13 14 15 16 17 18
+25 C
+85 C
-40 C
ERROR VECTOR MAGNITUDE (%)
OUTPUT POWER (dBm)
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
30
50
70
90
110
130
150
170
190
210
230
250
270
290
310
330
1.5 1.75 2 2.25 2.5 2.75 3
Gain
P1dB
Psat
Icc
GAIN (dB), P1dB (dBm), Psat (dBm)
Icc (mA)
Vpd (Vdc)
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 70
LINEAR & POWER AMPLIFIERS - SMT
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Collector Bias Voltage (Vcc) +5Vdc
Control Voltage (Vpd) +3.5 Vdc
RF Input Power (RFIN)(Vs = Vpd = +3.0 Vdc) +13 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 17 mW/°C above 85 °C)
1.105 W
Thermal Resistance
(junction to ground paddle)
59 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Part Number Package Body Material Lead Finish MSL Rating Package Marking
[3]
HMC415LP3 Low Stress Injection Molded Plastic Sn/Pb Solder
MSL1
[1]
415
XXXX
HMC415LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
MSL1
[2]
415
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6P7-P9

HMC415LP3ETR

Mfr. #:
Buy HMC415LP3ETR
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier InGaP HBT pow amp SMT, 4.9 - 5.9 GHz
Lifecycle:
New from this manufacturer.
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