DPF240X200NA

DPF240X200NA
preliminary
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Parallel legs
HiPerFRED²
2
3
1
4
Part number
DPF240X200NA
Backside: isolated
FAV
rr
tns55
RRM
120
200
=
V= V
I= A
2x
Features / Advantages: Applications: Package:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
SOT-227B (minibloc)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions.
20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPF240X200NA
preliminary
n
s
6
A
T
VJ
C
reverse recovery time
A
16
55
85
n
s
I
RM
max. reverse recovery current
I
F
=A;120
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V100
T
VJ
C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.19
R 0.4 K/
W
R
min.
120
V
RSM
V
10T = 25°C
VJ
T = °C
VJ
m
A
0.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
80
P
tot
310
W
T = 25°C
C
R K/
W
0.10
120
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Uni
t
1.51
T = 25°C
VJ
150
V
F0
V
0.65T = °C
VJ
150
r
F
3.4
m
V
1.06T = °C
VJ
I = A
F
V
120
1.48
I = A
F
240
I = A
F
240
threshold voltage
slope resistance
for power loss calculation only
µ
A
150
V
RRM
V
200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
328
j
unction capacitance
V = V100 T = 25°Cf = 1 MHz
R
VJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
1.20 k
A
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
200
IXYS reserves the right to change limits, conditions and dimensions.
20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPF240X200NA
preliminary
Ratings
abcdZyyww
XXXXX
Product Marking
Logo
Part No.
DateCode
Assembly Code
Assembly Line
®
D
P
F
240
X
200
NA
Part number
Diode
HiPerFRED
ultra fast
Parallel legs
SOT-227B (minibloc)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
V V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B
(
minibloc
)
Similar Part Package Voltage class
DSEI2x121-02A SOT-227B (minibloc) 200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I 1 mA
ISOL
DPF240X200NA 512342Tube 10DPF240X200NAStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0.65
m
V
0 max
R
0 max
slope resistance *
1.5
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved

DPF240X200NA

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules HiPerFRED
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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