MCR218-006

© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1 Publication Order Number:
MCR218/D
MCR218-2G, MCR218-4G,
MCR218-6G
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.
Features
Glass-Passivated Junctions
Blocking Voltage to 400 Volts
TO-220 Construction − Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= *40 to 125°C, Gate Open)
MCR218−2G
MCR218−4G
MCR218−6G
V
DRM,
V
RRM
50
200
400
V
On-State RMS Current
(180° Conduction Angles; T
C
= 70°C)
I
T(RMS)
8.0 A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 125°C)
I
TSM
100 A
Circuit Fusing Considerations (t = 8.3 ms) I
2
t 26 A
2
s
Forward Peak Gate Power
(Pulse Width 1.0 ms, T
C
= 70°C)
P
GM
5.0 W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 70°C)
P
G(AV)
0.5 W
Forward Peak Gate Current
(Pulse Width 1.0 ms, T
C
= 70°C)
I
GM
2.0 A
Operating Junction Temperature Range T
J
40 to +125 °C
Storage Temperature Range T
stg
40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
8 AMPERES RMS
50 thru 400 VOLTS
Device Package Shipping
ORDERING INFORMATION
C
G
A
TO−220AB
CASE 221A−09
STYLE 3
1
2
3
4
www.onsemi.com
MARKING
DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
MCR218x = Device Code
x = 2, 4 or 6
G = Pb−Free Package
AKA = Diode Polarity
MCR218−2G TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−4G TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−6G TO220AB
(Pb−Free)
500 Units/Bulk
AY WW
MCR218x−G
AKA
MCR218−2G, MCR218−4G, MCR218−6G
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
2.0 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open) T
J
= 25°C
T
J
= 125°C
I
DRM
, I
RRM
10
2.0
mA
mA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(I
TM
= 16 A Peak)
V
TM
1.5 1.8 V
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100 Ohms)
I
GT
10 25 mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100 Ohms)
V
GT
1.5 V
Gate Non−Trigger Voltage
(Rated 12 V, R
L
= 100 Ohms, T
J
= 125°C)
V
GD
0.2 V
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
I
H
16 30 mA
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
dv/dt 100
V/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle 2%.
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol Parameter
V
DRM
Peak Repetitive Off State Forward Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak On State Voltage
I
H
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
I
RRM
at V
RRM
(off state)
MCR218−2G, MCR218−4G, MCR218−6G
www.onsemi.com
3
I
T(AV)
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
T
C
, MAXIMUM ALLOWABLE CASE TEMPERATURE (C)
°
85
95
105
115
125
87654321
dc
0
75
α = 30° 90° 120° 180°60°
α = CONDUCTION ANGLE
I
T(AV)
, AVG. ON‐STATE CURRENT (AMPS)
P
(AV)
, AVERAGE ON‐STATE POWER DISSIPATION
3.0
6.0
9.0
12
15
8.07.06.05.04.03.02.01.0
dc
0
0
α = 30°
90°
120°
180°
60°
α = Conduction Angle
(WATTS)
α
α
Figure 1. Current Derating Figure 2. On−State Power Dissipation
4.0
2.0
0.5
0.7
10080
0.4
1406040 120-20 0-40 20
T
J
, JUNCTION TEMPERATURE (°C)
-60
, NORMALIZED HOLDING CURRENT (mA)
H
0.9
1.0
1.5
3.0
I
-60 120-40 0-20 20 40 60 80 100 14
0
T
J
, JUNCTION TEMPERATURE (°C)
0.7
0.5
0.3
, NORMALIZED GATE TRIGGER VOLTAGE
GT
1.0
0.4
0.9
1.3
1.2
V
V
D
= 12 Vdc
V
D
= 12 Vdc
-60 120-40 0-20 20 40 60 80 100 140
T
J
, JUNCTION TEMPERATURE (°C)
0.7
0.5
0.3
, NORMALIZED GATE TRIGGER CURRENT (mA)
GT
1.0
0.4
0.9
3.0
2.0
I
1.5
V
D
= 12 Vdc
Figure 3. Typical Gate Trigger Current
versus Temperature
Figure 4. Typical Gate Trigger Voltage
versus Temperature
Figure 5. Typical Holding Current
versus Temperature

MCR218-006

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
SCRs 400V 8A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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