TMMBAT48FILM Datasheet TMMBAT48FILM | P1-P3

®

TMMBAT 47

TMMBAT 48

SMALL SIGNAL SCHOTTKY DIODES

DESCRIPTION

General purpose, metal to silicon diodes featuring

very low turn-on voltage and fast switching.

These devices have integrated protection against

excessive voltage such as electrostatic discharges.

August 1999 Ed: 1A

MINIMELF

(Glass)

Symbol Parameter TMMBAT47 TMMBAT48 Unit

V

RRM

Repetitive Peak Reverse Voltage 20 40 V

I

F

Forward Continuous Current

T

l

= 25

°

C

350 mA

I

FRM

Repetitive Peak Fordward Current t

p

≤

1s

δ ≤

0.5

1A

I

FSM

Surge non Repetitive Forward Current t

p

= 10ms 7.5 A

t

p

= 1s 1.5

P

tot

Power Dissipation

T

l

= 25

°

C

330 mW

T

stg

T

j

Storage and Junction Temperature Range - 65 to 150

- 65 to 125

°

C

°

C

T

L

Maximum Temperature for Soldering during 15s 260

°

C

ABSOLUTE RATINGS

(limiting values)

Symbol Test Conditions Value Unit

R

th(j-l)

Junction-leads 300

°

C/W

THERMAL RESISTANCE

1/5

* Pulse test: t

p

≤

300

µ

s

δ

<

2%

.

Symbol Test Conditions Min. Typ. Max. Unit

V

BR

T

j

= 25

°

CI

R

= 10

µ

A

TMMBAT47 20 V

T

j

= 25

°

CI

R

= 25

µ

A

TMMBAT48 40

V

F

*

T

j

= 25

°

C

I

F

= 0.1mA All Types 0.25 V

T

j

= 25

°

C

I

F

= 1mA 0.3

T

j

= 25

°

C

I

F

= 10mA 0.4

T

j

= 25

°

C

I

F

= 30mA TMMBAT47 0.5

T

j

= 25

°

C

I

F

= 150mA 0.8

T

j

= 25

°

C

I

F

= 300mA 1

T

j

= 25

°

C

I

F

= 50mA TMMBAT48 0.5

T

j

= 25

°

C

I

F

= 200mA 0.75

T

j

= 25

°

C

I

F

= 500mA 0.9

I

R

*

T

j

= 25

°

C

V

R

= 1.5V All Types 1

µ

A

T

j

= 60

°

C

10

T

j

= 25

°

C

V

R

= 10V TMMBAT47 4

T

j

= 60

°

C

20

T

j

= 25

°

C

V

R

= 20V 10

T

j

= 60

°

C

30

T

j

= 25

°

C

V

R

= 10V TMMBAT48 2

T

j

= 60

°

C

15

T

j

= 25

°

C

V

R

= 20V 5

T

j

= 60

°

C

25

T

j

= 25

°

C

V

R

= 40V 25

T

j

= 60

°

C

50

STATIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

C

T

j

= 25

°

CV

R

= 0V

f = 1MHz 20 pF

T

j

= 25

°

CV

R

= 1V

12

t

rr

T

j

= 25

°

C I

F

= 10mA V

R

= 1V i

rr

= 1mA R

L

= 100

Ω

10 ns

DYNAMIC CHARACTERISTICS

2/5

TMMBAT 47/TMMBAT 48

Figure 1. Forward current versus forward

voltage at different temperatures (typical

values).

Figure 2. Forward current versus forward

voltage (typical values).

Figure 3. Reverse current versus junction

temperature.

Figure 4. Reverse current versus continuous

reverse voltage (typical values).

3/5

TMMBAT 47/TMMBAT 48

TMMBAT48FILM

TMMBAT48FILM

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