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BT139X-600G,127

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
F
BT139X-600
4Q Triac
1 May 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated four quadrant triac in a SOT186A "full pack" plastic package intended
for use in applications requiring high bidirectional transient and blocking voltage
capability and high thermal cycling performance. Typical applications include motor
control, industrial and domestic lighting, heating and static switching.
2. Features and benefits
•
High blocking voltage capability
•
High noise immunity
•
Isolated package
•
Planar passivated for voltage ruggedness and reliability
•
Triggering in all four quadrants
3. Applications
•
General purpose motor control
•
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 155 A
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 38 °C; Fig. 1; Fig. 2;
Fig. 3
- - 16 A
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 5 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 8 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 10 35 mA
NXP Semiconductors
BT139X-600
4Q Triac
BT139X-600 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 1 May 2015 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 22 70 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT139X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
P1-P3P4-P6P7-P9P10-P12P13-P14

BT139X-600G,127

Mfr. #:
Buy BT139X-600G,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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