VS-20ETF...-M3 Series
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Vishay Semiconductors
Revision: 23-Nov-17
1
Document Number: 96213
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
R
200 V, 400 V, 600 V
V
F
at I
F
1.3 V
I
FSM
300 A
t
rr
60 ns
T
J
max. 150 °C
Snap factor 0.6
Package 2L TO-220AC
Circuit configuration Single
Anode
1
3
Cathode
Base
cathode
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
Range 200 to 600 V
I
F(AV)
Sinusoidal waveform 20
A
I
FSM
300
t
rr
1 A, 100 A/μs 60 ns
V
F
10 A, T
J
= 25 °C 1.2 V
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK REVERSE
VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-20ETF02-M3 200 300
5VS-20ETF04-M3 400 500
VS-20ETF06-M3 600 700
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 97 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 316
A
2
s
10 ms sine pulse, no voltage reapplied 442
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 4420 A
2
s
