Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data Rev. 01 — 28 May 2001 2 of 12
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 30 V
I
D
drain current (DC) T
amb
=25°C; pulsed; t
p
≤ 10 s − 12.5 A
P
tot
total power dissipation T
amb
=25°C; pulsed; t
p
≤ 10 s − 2.5 W
T
j
junction temperature − 150 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 12.5 A 7.3 9 mΩ
V
GS
= 4.5 V; I
D
= 10.5 A 10.9 13 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 30 V
V
GS
gate-source voltage (DC) −±20 V
I
D
drain current (DC) T
amb
=25°C; pulsed; t
p
≤ 10 s; Figure 2 and 3 − 12.5 A
T
amb
=70°C; pulsed; t
p
≤ 10 s; Figure 2 − 10 A
I
DM
peak drain current T
amb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 − 50 A
P
tot
total power dissipation T
amb
=25°C; pulsed; t
p
≤ 10 s; − 2.5 W
T
amb
=70°C; pulsed; t
p
≤ 10 s; Figure 1 − 1.6 W
T
stg
storage temperature −55 +150 °C
T
j
operating junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
amb
=25°C; pulsed; t
p
≤ 10 s − 2.3 A
