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SI7196DP-T1-E3

P1-P3P4-P6P7-P9P10-P12P13-P13
Vishay Siliconix
Si7196DP
www.vishay.com
4
Document Number: 70336
S09-0273-Rev. C, 16-Feb-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
T
J
- Temperature (°C)
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
2468 10
I
D
= 12 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
0
30
60
90
120
150
Power (W)
Time (s)
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
1
100
0.01
- Drain Current (A)I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 ms
10 ms
100 ms
1 s
0.1110
10
T
A
= 25 °C
Single Pulse
Limited by R
DS(on)
*
100
0.01
10 s
DC
Document Number: 70336
S09-0273-Rev. C, 16-Feb-09
www.vishay.com
5
Vishay Siliconix
Si7196DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
50
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
10
20
30
40
50
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.00
0.44
0.88
1.32
1.76
2.20
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
Vishay Siliconix
Si7196DP
www.vishay.com
6
Document Number: 70336
S09-0273-Rev. C, 16-Feb-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70336
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
0.02
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
0.01
0.2
0.05
Duty Cycle = 0.5
Single Pulse
0.1
10
-3
10
-2
110
-1
10
-4
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P12P13-P13

SI7196DP-T1-E3

Mfr. #:
Buy SI7196DP-T1-E3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 30V 16A 41.6W
Lifecycle:
New from this manufacturer.
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