PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f Micron Technology, Inc., reserves the right to change products or specifications without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
13 ©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Configuration Register Operation
Configuration Register Operation
The configuration register (CR) defines how the CellularRAM device performs its trans-
parent self refresh. Altering the refresh parameters can dramatically reduce current con-
sumption during standby mode. Page mode control is also embedded into the CR. This
register can be updated anytime while the device is operating in a standby state.
Figure 12 on page 15 describes the control bits used in the CR. At power up, the CR is set
to 0070h.
Access Using ZZ#
The CR can be loaded using a WRITE operation immediately after ZZ# makes a HIGH-
to-LOW transition (Figure 9). The values placed on addresses A[21:0] are latched into the
CR on the rising edge of CE# or WE#, whichever occurs first. LB#/UB# are “Dont Care.
Access using ZZ# is WRITE only.
Figure 9: Load Configuration Register Operation
Software Access to the Configuration Register
The contents of the CR can either be read or modified using a software sequence. The
nature of this access mechanism may eliminate the need for ZZ# ball.
If the software mechanism is used, ZZ# can simply be tied to V
CCQ. The port line typi-
cally used for ZZ# control purposes will no longer be required. However, ZZ# should not
be tied to V
CCQ if the system will use DPD; DPD cannot be enabled or disabled using the
software access sequence.
The CR is loaded using a four-step sequence consisting of two READ operations followed
by two WRITE operations (see Figure 10). The read sequence is virtually identical except
that an asynchronous READ is performed during the fourth operation (see Figure 11).
Note that a third READ cycle of the highest address cancels the sequence until a different
address is read.
The address used during all READ and WRITE operations is the highest address of the
CellularRAM device being accessed (3FFFFFh for 64Mb); the content at this address is
changed by using this sequence (note that this is a deviation from the CellularRAM spec-
ification). The data bus is used to transfer data into or out of bits 15–0 of the CR.
Writing to the CR using the software sequence modifies the function of ZZ#. Once the
software sequence loads the CR, the ZZ# level no longer enables PAR operation. PAR
operation will be updated whenever the software sequence loads a new value into the
CR. This ZZ# functionality will continue until the next time the device is powered up.
The operation of ZZ# is not affected if the software sequence is only used to read the
contents of the CR. The use of the software sequence does not affect the ability to per-
form the standard (ZZ#-controlled) method of loading the CR.
ADDRESS VALID
CE#
ZZ#
WE#
t < 500ns
ADDRESS
PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f Micron Technology, Inc., reserves the right to change products or specifications without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
14 ©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Configuration Register Operation
Figure 10: Software Access Load Configuration Register
Note: The WRITE on the third cycle must be CE#-controlled.
Figure 11: Software Access Read Configuration Register
Notes: 1. The WRITE on the third cycle must be CE#-controlled.
2. CE# must be HIGH for 150ns before performing the cycle that reads the configuration reg-
ister.
ADDRESS
(MAX)
ADDRESS
(MAX)
ADDRESS
(MAX)
XXXXh XXXXh
CR VALUE
IN
A
DDRESS
CE#
OE#
WE#
LB#/UB#
DATA
DON'T CARE
READ READ WRITE
1
WRITE
ADDRESS
(MAX)
0000h
ADDRESS
(MAX)
ADDRESS
(MAX)
ADDRESS
(MAX)
XXXXh XXXXh
CR VALUE
OUT
A
DDRESS
CE#
OE#
WE#
LB#/UB#
DATA
DON'T CARE
READ READ WRITE
1
READ
NOTE
2
ADDRESS
(MAX)
0000h
PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f Micron Technology, Inc., reserves the right to change products or specifications without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
15 ©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Configuration Register Operation
Figure 12: Configuration Register Bit Mapping
Partial-Array Refresh (CR[2:0]) Default = Full Array Refresh
The PAR bits restrict refresh operation to a portion of the total memory array. This fea-
ture allows the system to reduce current by only refreshing that part of the memory array
required by the host system. The refresh options are full array, one-half array, one-quar-
ter array, one-eighth array, or none of the array. The mapping of these partitions can
start at either the beginning or the end of the address map (see Table 3).
Sleep Mode (CR[4]) Default = PAR Enabled, DPD Disabled
The sleep mode bit determines which low-power mode is to be entered when ZZ# is
driven LOW. If CR[4] = 1, PAR operation is enabled. If CR[4] = 0, DPD operation is
enabled. PAR can also be enabled directly by writing to the CR using the software access
sequence. Note that this then disables ZZ# initiation of PAR. DPD cannot be enabled or
disabled using the software access sequence; this should only be done using ZZ# to
access the CR.
Table 3: 64Mb Address Patterns for PAR (CR[4] = 1)
CR[2] CR[1] CR[0] Active Section Address Space Size Density
0 0 0 Full die 000000h–3FFFFFh 4 Meg x 16 64Mb
0 0 1 One-half of die 000000h–1FFFFFh 2 Meg x 16 32Mb
0 1 0 One-quarter of die 000000h–0FFFFFh 1 Meg x 16 16Mb
0 1 1 One-eighth of die 000000h–07FFFFh 512K x 16 8Mb
1 0 0 None of die 0 0 Meg x 16 0Mb
1 0 1 One-half of die 200000h–3FFFFFh 2 Meg x 16 32Mb
1 1 0 One-quarter of die 300000h–3FFFFFh 1 Meg x 16 16Mb
1 1 1 One-eighth of die 380000h–3FFFFFh 512K x 16 8Mb
PAR
A4
A3
A2 A1
A0
Configuration
Register
Address Bus
4
1
2
3
0
RESERVED
6 5
A5
0
1
Sleep Mode
DPD Enabled
PAR Enabled (default)
CR[4]
TCR
CR[6]
CR[5]
11
1
1
00
0
0
Maximum Case Temp.
+85˚C (default)
+70˚C
+45˚C
+15˚C
A6
21–8
RESERVED
A[21:8]
CR[1] CR[0]
PAR Refresh Coverage
Full array (default)
Bottom 1/2 array
Bottom 1/4 array
Bottom 1/8 array
None of array
Top 1/2 array
Top 1/4 array
Top 1/8 array
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
CR[2]
SLEEP
Must be set to "0"All must be set to "0"
A7
7
PAGE
0
1
Page Mode Enable/Disable
Page Mode Disabled (default)
Page Mode Enabled
CR[7]

MT45W4MW16PFA-70 WT TR

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Manufacturer:
Micron
Description:
IC PSRAM 64M PARALLEL 48VFBGA
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