RJH60A83RDPP-M0#T2 Datasheet RJH60A83RDPP-M0#T2 | P1-P3

R07DS0808EJ0200 Rev.2.00 Page 1 of 8

Jul 12, 2012

Preliminary Datasheet

RJH60A83RDPP-M0

600V - 10A - IGBT

Application: Inverter

Features

 Reverse conducting IGBT with monolithic diode

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

V

CE(sat)

= 2.1 V typ. (at I

C

= 10 A, V

GE

= 15 V, Ta = 25°C)

 Built-in fast recovery diode (t

rr

= 130 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

t

f

= 45 ns typ. (at V

CC

= 300 V, V

GE

= 15 V, I

C

= 10 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003AF-A

(Package name:

TO-220FL)

1

2

3

1. Gate

2. Collector

3. Emitter

C

G

E

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

R

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

C

20 A Collector current

Tc = 100°C I

C

10 A

Collector peak current Ic(peak)

Note1

40 A

Collector to emitter diode forward current i

DF

10 A

Collector to emitter diode forward peak current i

DF

(peak)

Note1

40 A

Collector dissipation P

C

Note2

30 W

Junction to case thermal resistance j-c

Note2

4.1 C/ W

Junction temperature Tj 150 C

Storage temperature Tstg –55 to +150 C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0808EJ0200

Rev.2.00

Jul 12, 2012

RJH60A83RDPP-M0 Preliminary

R07DS0808EJ0200 Rev.2.00 Page 2 of 8

Jul 12, 2012

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Collector to emitter breakdown

voltage

V

(BR)CES

600 — — V I

C

=10 A, V

GE

= 0

Zero gate voltage collector current

/ diode reverse current

I

CES

/ I

R

— — 1 A V

CE

= 600 V, V

GE

= 0 V

Gate to emitter leak current I

GES

— — ±100 nA V

GE

= ±30 V, V

CE

= 0 V

Gate to emitter cutoff voltage V

GE(off)

4.5 — 7.5 V V

CE

= 10 V, I

C

= 1 mA

V

CE(sat)

— 2.1 2.6 V I

C

= 10 A, V

GE

= 15 V

Note3

Collector to emitter saturation voltage

V

CE(sat)

— 3.1 — V I

C

= 20 A, V

GE

= 15 V

Note3

Input capacitance Cies — 280 — pF

Output capacitance Coes — 19 — pF

Reveres transfer capacitance Cres — 11 — pF

V

CE

= 25 V

V

GE

= 0 V

f = 1 MHz

Total gate charge Qg — 19.7 — nC

Gate to emitter charge Qge — 3.4 — nC

Gate to collector charge Qgc — 12.0 — nC

V

GE

= 15 V

V

CE

= 300 V

I

C

= 10 A

Turn-on delay time t

d(on)

— 31 — ns

Rise time t

r

— 14 — ns

Turn-off delay time t

d(off)

— 54 — ns

Fall time t

f

— 45 — ns

Turn-on energy E

on

— 0.23 — mJ

Turn-off energy E

off

— 0.16 — mJ

Total switching energy E

total

— 0.39 — mJ

V

CC

= 300V

V

GE

= 15 V

I

C

= 10 A,

Rg = 5 

Inductive load

Short circuit withstand time t

sc

3.0 5.0 — s

V

CE

 360 V, V

GE

= 15 V

Tj=100C

FRD Forward voltage V

F

— 2.3 — V I

F

= 10 A

Note3

FRD reverse recovery time t

rr

— 130 — ns

FRD reverse recovery charge Q

rr

— 0.28 — C

FRD peak reverse recovery current I

rr

— 5.9 — A

I

F

= 10 A

di

F

/dt = 100 A/s

Notes: 3. Pulse test.

RJH60A83RDPP-M0 Preliminary

R07DS0808EJ0200 Rev.2.00 Page 3 of 8

Jul 12, 2012

Main Characteristics

Typical Output Characteristics

40

30

20

10

1234

5

Tc = 25

°

C

Pulse Test

12 V

10 V

15 V

18 V

Collector Current I

C

(A)Collector Current I

C

(A)

Maximum Safe Operation Area

0

V

GE

= 8 V

V

GE

= 8 V

Collector to Emitter Voltage V

CE

(V)

Collector to Emitter Voltage V

CE

(V)

Typical Output Characteristics

40

30

20

10

1234

5

Tc = 150

°

C

Pulse Test

12 V

10 V

15 V

18 V

Collector Current I

C

(A)

0

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Turn-off SOA

0200400 600 800

50

40

30

20

10

0

100

10

0.1

1

0.01

110010

1000

Tc = 25°C

Single pulse

100 μs

PW = 10 μs

Collector Current I

C

(A)

Case Temperature Tc (°C)

Maximum DC Collector Current vs.

Case Temperature

20

15

10

5

0

0255010075 125 150

175

25

0255010075 125 150

175

Collector Dissipation Pc (W)

Case Temperature Tc (°C)

Collector Dissipation vs.

Case Temperature

40

30

20

10

0

RJH60A83RDPP-M0#T2

RJH60A83RDPP-M0#T2

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