CDBHD2100-G

SMD DIODE SPECIALIST
COMCHIP
MDS0707001A
Page 1
Schottky barrier chips in bridge
• Metal-Semiconductor junction with guard ring
• Highsurge current capability
• Silicon epitaxial planar chips
• For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications
• Lead-free part, meet RoHS requirements
• Case: Mini-Dip bridge (TO-269AA) plastic molded case
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: As marked on body
• Mounting Position: Any
• Weight: 0.0078 ounces, 0.22 grams
Unit :inch(mm)
.008(0.2)
Max.
.106(2.7)
.090(2.3)
.114(2.90)
.094(2.40)
.051(1.3)
.035(0.9)
.193(4.90)
.177(4.50)
.067(1.7)
.057(1.3)
.031(0.8)
.019(0.5)
.016(0.41)
.006(0.15)
+ –
.165( 4 . 2 )
.150( 3 . 8 )
.275( 7 . 0 )
Max.
~ ~
.043(1.1)
.027(0.7)
.106(2.7)
.090(2.3)
C .02(0.5)
~
+
~
Mini-DIP
CDBHD - Symbols 280 290 2100 Units
Maximum Recurrent Peak Reverse Voltage VRRM 80 90 100 Volts
Maximum RMS Voltage VRMS 56 63 70 Volts
Maximum DC Blocking Voltage VDC 80 90 100 Volts
Maximum Average Forward Rectified Current
0.2x0.2” (5.0x5.0mm) copper pad area, see Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimposed on IFSM 50.0 Amps
rated load (JEDEC Me thod)
Maximum Forward Voltage at 1.0A (Note 1) VF 0.85 Volts
Maximum DC Reverse Current TA= 25°C
at Rated DC Blocking Voltage TA= 100°C
Typical Junction Capacitance (Note 2) CJ 125 pF
Typical Thermal Resistance (Note 3) RθJA 85.0
RθJL 20.0
Operating Junction Temperature Range TJ -55 ~ +125 °C
Storage Temperature Range TSTG -55 ~ +150 °C
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
IAV 2.0 Amps
IR mA
°C/W
0.5
20.0
:
Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
2. Me asured at 1.0MH z and ap plied reverse vo ltage of 4.0 Volts
3. Thermal resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0.2x0.2(5.0x5.0mm ) copper pa d areas.
Schottky Bridge Rectifiers
Reverse Voltage: 80 - 100 Volts
Forward Current: 2.0 Amp
CDBHD280-G Thru 2100-G
Features
Mechanical Data
SMD DIODE SPECIALIST
COMCHIP
Schottky Bridge Rectifiers
Reverse Voltage (Volts)
Fig. 5 - Typical Junction Capacitance
0.1 1.0 10 100
Junction Capacitance (pF)
100
1000
10
TJ=25°C
f=1.0MHz
Fig.1 - Forward Current Derating Curve
Average Forward Current (A)
0 25 50 75 100 125 150 175
Lead Temperature ( °C)
2.4
2.0
1.6
1.2
0.8
0.4
single phase half wave 60Hz
resistive or inductive load
3.75(9.5mm) lead length
1 10 100
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
1
10
100
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
Fig. 3 - Typical Instantaneour Forward
Characteristics
Instantaneous Forward Voltage (Volts)
Instantaneous Forward Current (A)
0 0.2 0.4 0.6 0.8
10
1.0
0.1
Fig. 4 - Typeical Reverse Characteristic
Instantaneous Reverse Current (uA)
Percent of Rated Peak Reverse Voltage ( %)
10000
1000
100
10
1.0
0.1
0 20 40 60 80 100
TJ=25°C
TJ=100°C
TJ=125°C
TJ=150°C
MDS0707001A
Page 2

CDBHD2100-G

Mfr. #:
Manufacturer:
Comchip Technology
Description:
Bridge Rectifiers 2A 100V Schottky Bridge
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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