TISP4015L1AJR-S

AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ
TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ
VERY LOW VOLTAGE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
Low Capacitance
‘4015 ...................................................................................28 pF
‘4030 ...................................................................................27 pF
‘4040 ...................................................................................23 pF
Digital Line Signal Level Protection
- ISDN
- xDSL
Safety Extra Low Voltage, SELV, values
SMA Package (Top View)
Description
These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system
or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of transformer windings and low voltage electronics.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current
falls below the holding current value.
How To Order
Device
V
DRM
V
V
(BO)
V
‘4015 ± 8 ± 15
‘4030 ± 15 ± 30
‘4040 ± 25 ± 40
30 A “L” Series specified for:
- ITU-T recommendations K.20, K.45, K.21
- FCC Part 68 and GR-1089-CORE
Wave Shape Standard
I
TSP
A
2/10 µs GR-1089-CORE 150
8/20 µs IEC 61000-4-5 120
10/160 µs FCC Part 68 65
10/700 µs
ITU-T K.20/45/21
FCC Part 68
45
10/560 µs FCC Part 68 35
10/1000 µs GR-1089-CORE 30
Available in SMA and SMB Packages
SMA Saves 25 % Placement Area Over SMB
MDXXCCE
12R (B) T (A)
SMB Package (Top View)
T(A)R(B)
MDXXBGF
21
T
R
SD4XAA
T
erminals T and R correspond to the
alternative line designators of A and B
............................................ UL Recognized Components
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TI SP40xxL1
SMA / DO -214AC J - B e nd (A J )
E m bo sse d T a pe R e e l e d
(R)
SMB / DO-214AA J - B e nd (B J )
TISP40xxL1AJR-S
TISP40xxL1BJR-S
I n sert x x val u e cor r e s p o nd i n g to p r otecti o n v o l t a g e s of 15 V , 30 V and 40 V.
Order As
*
R
o
H
S
C
O
M
P
L
I
A
N
T
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage
‘4015
‘4030
‘4040
V
DRM
±8
±15
± 25
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
TSP
A
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
± 150
± 120
± 65
± 45
± 45
± 35
± 30
Non-repetitive peak on-state current (see Notes 1 and 2)
I
TSM
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2 s 50 Hz/60 Hz a.c.
1000 s 50 Hz/60 Hz a.c.
20
22
13
5
1.8
Initial rate of rise of current (2/10 waveshape) di/dt 130 A/µs
Maximum junction temperature T
JM
150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
=25°C.
2. The surge may be repeated after the device returns to its initial conditions.
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current
V
D
=V
DRM
±5 µA
V
(BO)
Breakover voltage di/dt = ±0.8 A/ms
‘4015
‘4030
‘4040
±15
±30
±40
V
V
(BO)
Impulse breakover
voltage
dv/dt
= ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±5A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4015
‘4030
‘4040
±34
±50
±63
V
I
(BO)
Breakover current di/dt = ±0.8 A/ms ±0.8 A
I
D
Off-state current
V
D
= ± 6V
V
D
= ± 13 V
V
D
= ± 22 V
‘4015
‘4030
‘4040
±2 µA
I
H
Holding current I
T
= ±5A, di/dt=+/-30mA/ms ±50 mA
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted) (Continued)
C
off
Off-state capacitance
f=1MHz, V
d
=1V rms, V
D
=0
f=1MHz, V
d
=1V rms, V
D
=1V
f=1MHz, V
d
=1V rms, V
D
=2V
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
28
27
23
25
24
20
23
22
18
36
35
29
33
31
26
30
29
24
pF
Parameter Test Conditions Min Typ Max Unit
Thermal Characteristics
Min Typ Max Unit
R
θJA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
, SMA
T
A
= 25 °C, (see Note 3) SMB
125
120
°C/W
265 mm x 210 mm populated line card, SMA
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C SMB
60
55
NOTE 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Test Conditions

TISP4015L1AJR-S

Mfr. #:
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) Very Low Voltage Bidirectional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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