VS-EPH3006L-N3
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Vishay Semiconductors
Revision: 03-Mar-17
1
Document Number: 95780
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Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Hyperfast soft recovery time
• 175 °C operating junction temperature
• Designed and qualified according to commercial
qualification
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-247AD 2L
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
1.4 V
t
rr
typ. 26 ns
T
J
max. 175 °C
Diode variation Single die
Base cathode
2
1
3
Cathode
Anode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 112 °C 30
A
Non-repetitive peak surge current I
FSM
T
C
= 25 °C, t
p
= 8.3 ms half sine wave 240
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 2.0 2.65
I
F
= 30 A, T
J
= 150 °C - 1.4 1.8
Reverse leakage current I
R
V
R
= V
R
rated - 0.02 30
μA
T
J
= 150 °C, V
R
= V
R
rated - - 300
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
