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IRFH4210DTRPBF

P1-P3P4-P6P7-P9
FastIRFET™
IRFH4210DPbF
HEXFET
®
Power MOSFET
Base part number Package Type
Standard Pack Orderable Part Number
Form Quantity
IRFH4210DPbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4210DTRPbF
V
DSS
25 V
R
DS(on)
max
(@ V
GS
= 10V)
1.10
(@ V
GS
= 4.5V)
1.35
Qg
(typical)
37.0 nC
I
D
(@T
C (Bottom)
= 25°C)
100 A
m
PQFN 5X6 mm
Features
Benefits
Low R
DS(ON)
(<1.10 m)
Lower Conduction Losses
Schottky Intrinsic Diode with Low Forward Voltage
Lower Switching Losses
Low Thermal Resistance to PCB (<1.0°C/W)
Enable better thermal dissipation
Low Profile (<0.9 mm)
results in
Increased Power Density
Industry-Standard Pinout

Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Notes through are on page 9
Absolute Maximum Ratings

Parameter Max. Units
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 44
A
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V 266
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V 168
I
DM
Pulsed Drain Current 400
P
D
@T
A
= 25°C Power Dissipation 3.5
W
P
D
@T
C(Bottom)
= 25°C Power Dissipation 125
Linear Derating Factor 0.028 W/°C
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
100
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015
IRFH4210DPbF
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015
Static @ T
J
= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V V
GS
= 0V, I
D
= 1mA
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C Reference to 25°C, I
D
= 10mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 0.85 1.10
m
V
GS
= 10V, I
D
= 50A
––– 1.10 1.35 V
GS
= 4.5V, I
D
= 50A
V
GS(th)
Gate Threshold Voltage 1.1 1.6 2.1 V V
DS
= V
GS
, I
D
= 100µA
V
GS(th)
Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 250 µA V
DS
= 20V, V
GS
= 0V
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
gfs Forward Transconductance 392 ––– ––– S V
DS
= 13V, I
D
= 50A
Q
g
Total Gate Charge ––– 77.0 ––– nC V
GS
= 10V, V
DS
= 13V, I
D
= 50A
Q
g
Total Gate Charge ––– 37.0 55.5
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 7.6 –––
V
DS
= 13V
Q
gs2
Post-Vth Gate-to-Source Charge ––– 6.4 –––
nC V
GS
= 4.5V
Q
gd
Gate-to-Drain Charge ––– 13.2 –––
I
D
= 50A
Q
godr
Gate Charge Overdrive ––– 9.8 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 19.6 –––
Q
oss
Output Charge ––– 37 ––– nC V
DS
= 16V, V
GS
= 0V
R
G
Gate Resistance ––– 1.3 –––
t
d(on)
Turn-On Delay Time ––– 19 ––– V
DD
= 13V, V
GS
= 4.5V
t
r
Rise Time ––– 45 –––
ns I
D
= 50A
t
d(off)
Turn-Off Delay Time ––– 24 –––
R
G
=1.8
t
f
Fall Time ––– 16 –––
C
iss
Input Capacitance ––– 4812 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1459 –––
pF V
DS
= 13V
C
rss
Reverse Transfer Capacitance ––– 355 –––
ƒ = 1.0MHz
Avalanche Characteristics

Parameter Typ. Max.
E
AS
Single Pulse Avalanche Energy ––– 247
I
AR
Avalanche Current ––– 50
Diode Characteristics

Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 100
A
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
––– ––– 400
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 0.75 V T
J
= 25°C, I
S
= 50A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 27 41 ns T
J
= 25°C, I
F
= 50A, V
DD
= 13V
Q
rr
Reverse Recovery Charge ––– 59 89 nC
di/dt = 300A/µs

Parameter Typ. Max. Units
R
JC
(Bottom)
Junction-to-Case ––– 1.0
R
JC
(Top)
Junction-to-Case ––– 22
°C/W
R
JA
Junction-to-Ambient ––– 36
R
JA
(<10s)
Junction-to-Ambient ––– 21
Thermal Resistance
IRFH4210DPbF
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015
Fig 1. Typical Output Characteristics
0 102030405060708090100
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 20V
V
DS
= 13V
I
D
= 50A
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 50A
V
GS
= 10V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
BOTTOM 2.75V
60µs PULSE WIDTH
Tj = 25°C
2.75V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.75V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
BOTTOM 2.75V
1.5 2.0 2.5 3.0 3.5 4.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 10V
60µs PULSE WIDTH
P1-P3P4-P6P7-P9

IRFH4210DTRPBF

Mfr. #:
Buy IRFH4210DTRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 25V Single N-Ch HEXFET PWR 50A
Lifecycle:
New from this manufacturer.
Delivery:
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