TSM3443
20V P-Channel MOSFET
Document Number:
DS_P0000077 1
Version: F15
V
DS
(V) R
DSON
(mΩ) I
D
(A)
20
60 @ VGS = -4.5V -4.7
100 @ VGS = -2.5V -3.8
Features
● Advance Trench Process Technology
● High Density Cell Design fPor Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM3443CX6 RFG
SOT-26 3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(T
A
=25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
GS
@4.5V. I
D
-4.7 A
Pulsed Drain Current, V
GS
@4.5V I
DM
-20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-1.7 A
Maximum Power Dissipation
T
A
=25°C
P
D
2
W
T
A
=70°C 1.3
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
30 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
80 °C/W
Note 1: Pulse width limited by the Maximum junction temperature
Note 2: Surface Mounted on FR4 Board, t ≤ 5 sec
P-Channel MOSFET
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
