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BAT46W-G3-08

P1-P3P4-P4
BAT46W-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 25-Feb-13
1
Document Number: 85159
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• For general purpose applications
• This diode features very low turn-on voltage
and fast switching
• This device is protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-G3 - green commercial grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE
INTERNAL
CONSTRUCTION
TYPE MARKING REMARKS
BAT46W-G BAT46W-G3-08 or BAT46W-G3-18 Single Diode LH Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
100 V
Forward continuous current
(1)
I
F
150 mA
Repetitive peak forward current
(1)
t
p
< 1 s, < 0.5 I
FRM
350 mA
Surge forward current
(1)
t
p
< 10 ms I
FSM
750 mA
Power dissipation
(1)
T
amb
= 65 °C P
tot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
300 K/W
Junction temperature T
j
125 °C
Operating temperature range T
op
- 55 to + 125 °C
Storage temperature range T
stg
- 55 to + 150 °C
BAT46W-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 25-Feb-13
2
Document Number: 85159
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test; t
p
300 μs, < 2 %
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Instantaneous Forward Characteristics
Fig. 2 - Typical Reverse Characteristics
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
100 V
Leakage current
(1)
V
R
= 1.5 V I
R
0.5 μA
V
R
= 1.5 V, T
j
= 60 °C I
R
5μA
V
R
= 10 V I
R
0.8 μA
V
R
= 10 V, T
j
= 60 °C I
R
7.5 μA
V
R
= 50 V I
R
2μA
V
R
= 50 V, T
j
= 60 °C I
R
15 μA
V
R
= 75 V I
R
5μA
V
R
= 75 V, T
j
= 60 °C I
R
20 μA
Forward voltage
(1)
I
F
= 0.1 mA V
F
250 mV
I
F
= 10 mA V
F
450 mV
I
F
= 250 mA V
F
1000 mV
Diode capacitance
V
R
= 0 V, f = 1 MHz C
D
10 pF
V
R
= 1 V, f = 1 MHz C
D
6pF
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
1.2 1 0.8 0.6 0.4 0.2 0
18546
V
F
- Forward Voltage (V)
= 60 °CT
j
25 °C
18547
I- Reverse Leakage Current (µA)
R
0.01
0.1
1
10
100
020406080100
V
R
- Reverse Voltage (V)
T
j
= 60 °C
T
j
= 25 °C
200
18548
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
P - Power Dissipation (mW)
tot
BAT46W-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 25-Feb-13
3
Document Number: 85159
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
P1-P3P4-P4

BAT46W-G3-08

Mfr. #:
Buy BAT46W-G3-08
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 100Volt 150mA 750mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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