Document Number: 64821
S10-2817-Rev. D, 20-Dec-10
www.vishay.com
5
Vishay Siliconix
DG508B, DG509B
Notes:
a. V
AX
, V
EN
= input voltage perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. R
DS(on)
= R
DS(on)
max. - R
DS(on)
min.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (Single Supply 12 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V (± 10 %)
V
AX
, V
EN
= 2.0 V, 0.8 V
a
Temp.
b
Typ.
c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Channel On Leakage Current I
D(on)
V+ = 12 V, V- = 0 V
V
S
= V
D
= 0 V/10 V
DG508B
Room - 11- 1 1
nA
Full - 100 100 - 100 100
DG509B
Room - 11- 1 1
Full - 50 50 - 50 50
Digital Control
Logic High Input Voltage V
INH
Full 2.0 2.0
V
Logic Low Input Voltage V
INL
Full 0.8 0.8
Logic High Input Current I
IH
V
AX
, V
EN
= 2.0 V Full - 1 1 - 1 1
µA
Logic Low Input Current I
IL
V
AX
, V
EN
= 0.8 V Full - 1 1 - 1 1
Logic Input Capacitance
e
C
in
f = 1 MHz Room 4 pF
Dynamic Characteristics
Transition Time t
TRANS
VS
1
= 10 V/0 V, VS
8
= 0 V/10 V,
R
L
= 1 M, C
L
= 35 pF
Room 165 400 400
ns
Full 550 500
Break-Before-Make Interval t
OPEN
VS
1
= VS
8
= 5 V, C
L
= 35 pF,
R
L
= 1 k
Room 37 15 15
Full 1 1
Enable Turn-On Time t
ON(EN)
VS
1
= 5 V, VS
2
to VS
8
= 0 V,
R
L
= 1 k, C
L
= 35 pF
Room 125 300 300
Full 550 425
Enable Turn-Off Time t
OFF(EN)
Room 75 250 250
Full 350 300
Charge Injection
e
Q
INJ
C
L
= 1 nF, R
GEN
= 0
, V
GEN
= 0 V
Full 2.5 pC
Off Isolation
e
OIRR
C
L
= 5 pF
, R
L
= 50
f = 1 MHz
Room - 80
dB
Crosstalk
e
X
TALK
Room - 88
- 3 dB Bandwidth
e
BW R
L
= 50 Room 200 MHz
Total Harmonic Distortion
e
THD
R
L
= 10 k, 5 V
RMS
,
f = 20 Hz to 20 kHz
Room 0.26 %
Source Off Capacitance
e
C
S(off)
f = 1 MHz Room
2
pF
Drain Off Capacitance
e
C
D(off)
DG508B 13
DG509B 8
Channel On Capacitance
e
C
D(on)
DG508B 17
DG509B 12
Power Supply
Power Supply Current I+ V
AX
, V
EN
= 0 V, or V+
Room 0.01 0.5 0.5
mA
Full 0.6 0.6
