AON6452
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 10
T
J
=55°C 50
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage
2 3.2 4 V
I
D(ON)
100 A
20.5 25
T
J
=125°C 36 43
25 31 mΩ
g
FS
37 S
V
SD
0.66 1 V
I
S
40 A
C
iss
1400 1770 2200 pF
C
oss
115 165 214 pF
C
rss
33 55 80 pF
R
g
0.3 0.65 1.0 Ω
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=50V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=7V, I
D
=15A
Forward Transconductance
Diode Forward Voltage
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
Q
g
(10V) 14 28 42 nC
Q
gs
4 9 14 nC
Q
gd
6 10 14 nC
t
D(on)
12 ns
t
r
4 ns
t
D(off)
17 ns
t
f
5 ns
t
rr
20
29 37 ns
Q
rr
25
36 46
nC
t
rr
12
20 26 ns
Q
rr
60
82 110
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=500A/µs
I
F
=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-Off Fall Time
Total Gate Charge
Body Diode Reverse Recovery Time
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
V
GS
=10V, V
DS
=50V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=100A/µs
Turn-On DelayTime
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 2: May 2012 www.aosmd.com Page 2 of 7
