BGY785A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 29 September 2010 3 of 11
NXP Semiconductors
BGY785A
750 MHz, 18.5 dB gain push-pull amplifier
5. Characteristics
[1] f
p
= 55.25 MHz; V
p
=44dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+f
q
=746.5MHz.
[2] Measured according to DIN45004B;
f
p
= 740.25 MHz; V
p
=V
o
; f
q
= 747.25 MHz; V
q
=V
o
− 6dB; f
r
= 749.25 MHz; V
r
=V
o
− 6 dB; measured at f
p
+f
q
− f
r
= 738.25 MHz.
[3] The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Table 5. Bandwidth 40 MHz to 750 MHz
V
B
=24V; T
case
=30
°
C; Z
S
=Z
L
=75
Ω
; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 50 MHz 18 18.5 19 dB
f = 750 MHz 18.5 19.5 - dB
SL slope cable equivalent f = 40 MHz to 750 MHz 0 0.9 2 dB
FL flatness of frequency response f = 40 MHz to 750 MHz - ±0.1 ±0.3 dB
s
11
input return losses f = 40MHz to 80 MHz 2030- dB
f = 80 MHz to 160 MHz 18.5 29.5 - dB
f=160MHz to 320 MHz 1728- dB
f = 320 MHz to 640 MHz 15.5 26 - dB
f=640MHz to 750 MHz 1421- dB
s
22
output return losses f = 40 MHz to 80 MHz 20 29 - dB
f = 80 MHz to 160 MHz 18.5 26 - dB
f = 160 MHz to 320 MHz 17 23.5 - dB
f = 320 MHz to 640 MHz 15.5 22 - dB
f=640MHz to 750 MHz 1424- dB
CTB composite triple beat 110 channels flat; V
o
=44dBmV;
measured at 745.25 MHz
- −54.5 −53 dB
X
mod
cross modulation 110 channels flat; V
o
=44dBmV;
measured at 55.25 MHz
- −57.5 −56 dB
CSO composite second order distortion 110 channels flat; V
o
=44dBmV;
measured at 746.5 MHz
- −62 −53 dB
d
2
second order distortion
[1]
- −77 −65 dB
V
o
output voltage d
im
= −60 dB
[2]
59 62 - dBmV
F noise figure f = 50 MHz - 4.5 5.5 dB
f = 450 MHz - - 5.5 dB
f = 550 MHz - - 5.5 dB
f = 600 MHz - - 6 dB
f=750MHz - 67dB
I
tot
total current consumption (DC)
[3]
-225240mA
