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NLX1G99DMUTWG

P1-P3P4-P6P7-P9P10-P12P13-P15
NLX1G99
www.onsemi.com
7
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage Active Mode (High or Low State)
Tristate Mode (Output at Hi−Z)
Power Down Mode (V
CC
= 0 V)
−0.5 to V
CC
+ 0.5
−0.5 to +7.0
−0.5 to +7.0
V
I
IK
DC Input Diode Current V
IN
< GND −50 mA
I
OK
DC Output Diode Current V
OUT
< GND −50 mA
I
O
DC Output Source/Sink Current ±50 mA
I
CC
DC Supply Current Per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage Active Mode (High or Low State)
Tristate Mode (Output at Hi−Z)
Power Down Mode (V
CC
= 0 V)
0
0
0
V
CC
5.5
5.5
V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt /DV
Input Transition Rise or Fall Rate V
CC
= 2.5 V $ 0.2 V
V
CC
= 3.3 V $ 0.3 V
V
CC
= 5.0 V $ 0.5 V
0
0
0
No Limit
No Limit
No Limit
nS/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLX1G99
www.onsemi.com
8
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions V
CC
(V)
T
A
= 255C T
A
v +855C
T
A
= −555C to
+1255C
Unit
Min Max Min Max Min Max
V
T+
Positive
Threshold
Voltage
1.65
1.8
2.3
3.0
4.5
5.5
0.79
0.87
1.11
1.5
2.16
2.61
1.16
1.28
1.56
1.87
2.74
3.33
1.16
1.28
1.56
1.87
2.74
3.33
1.16
1.28
1.56
1.87
2.74
3.33
V
V
T−
Negative
Threshold
Voltage
1.65
1.8
2.3
3.0
4.5
5.5
0.35
0.38
0.58
0.84
1.41
1.78
0.62
0.68
0.87
1.19
1.9
2.29
0.35
0.38
0.58
0.84
1.41
1.78
0.35
0.38
0.58
0.84
1.41
1.78
V
V
H
Hysteresis
Voltage
1.65
1.8
2.3
3.0
4.5
5.5
0.30
0.33
0.40
0.53
0.71
0.8
0.62
0.68
0.8
0.87
1.04
1.2
0.30
0.33
0.40
0.53
0.71
0.8
0.62
0.68
0.8
0.87
1.04
1.2
0.30
0.33
0.40
0.53
0.71
0.8
0.62
0.68
0.8
0.87
1.04
1.2
V
V
OH
Minimum
High−Level
Output Voltage
V
IN
= V
T−MIN
or
V
T+MAX
I
OH
= −50 mA
I
OH
= −100 mA
1.65−5.5
1.65−5.5
V
CC
−0.1
V
CC
−0.1
V
CC
−0.1
V
CC
−0.1
V
CC
−0.1
V
CC
−0.1
V
V
IN
= V
T−MIN
or
V
T+MAX
I
OH
= −4 mA
I
OH
= −8 mA
I
OH
= −12 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65
2.3
2.7
3.0
3.0
4.5
1.2
1.9
2.2
2.4
2.3
3.8
1.2
1.9
2.2
2.4
2.3
3.8
1.2
1.9
2.2
2.4
2.3
3.8
V
V
OL
Maximum
Low−Level
Output Voltage
V
IN
= V
T−MIN
or
V
T+MAX
I
OL
= 50 mA
I
OL
= 100 mA
1.65−5.5
1.65−5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
T−MIN
or
V
T+MAX
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
1.65
2.3
2.7
3.0
3.0
4.5
0.45
0.3
0.4
0.4
0.55
0.55
0.45
0.3
0.4
0.4
0.55
0.55
0.45
0.3
0.4
0.4
0.55
0.55
I
IN
Input Leakage
Current
0 v V
IN
v
5.5 V
0 − 5.5 $0.1 $1.0 $1.0
mA
I
off
Power off
Leakage
Current
V
IN
or V
O
=
5.5 V
0 $1.0 $10 $10
mA
I
OZ
Tri−state
Output
Leakage
Current
V
O
= V
CC
or
GND
1.65−5.5 $1.0 $10 $10
mA
I
CC
Quiescent
Supply Current
V
IN
= V
CC
or
GND, I
O
= 0
1.65−5.5 1.0 10 10
mA
DI
CC
Increase in I
CC
Per Input
One input at
(V
CC
−0.6) V,
other inputs at
V
CC
or GND
2.3 − 5.5 10 100 100
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NLX1G99
www.onsemi.com
9
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter V
CC
(V) Test Condition
T
A
= 255C T
A
v +855C
T
A
= −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation
Delay, Any
Input to Output
Y (See Test
Circuit)
1.65−1.95
2.3 − 2.7
3.0 − 3.6
4.5 − 5.5
Refer to switch
positions and loading
conditions in
Figure 17 to 21.
4.3
2.4
1.7
1.3
12.8
7.1
5.2
4.0
25.1
10.2
6.7
4.5
4.3
2.4
1.7
1.3
25.1
10.2
6.9
4.9
4.3
2.4
1.7
1.3
25.1
10.2
7.0
5.0
ns
t
EN
Output Enable
Time, OE
to Y
1.65−1.95
2.3 − 2.7
3.0 − 3.6
4.5 − 5.5
Refer to switch
positions and loading
conditions in
Figure 17 to 21.
3.4
2.1
1.3
1.0
24.7
11
7.5
5.7
3.4
2.1
1.3
1.0
24.7
12
8.0
6.2
3.4
2.1
1.3
1.0
24.7
12.2
8.3
6.5
ns
t
DIS
Output Disable
Time, OE
to Y
1.65−1.95
2.3 − 2.7
3.0 − 3.6
4.5 − 5.5
Refer to switch
positions and loading
conditions in
Figure 17 to 21.
4.0
2.7
3.5
2.0
15.5
7.5
7.0
5.5
4.0
2.7
3.5
2.0
15.5
7.5
7.0
5.5
4.0
2.7
3.5
2.0
15.5
7.5
7.0
5.5
ns
t
PLH
,
t
PHL
Propagation
Delay, Any
Input to Output
Y (See Test
Circuit)
1.65−1.95
2.3 − 2.7
3.0 − 3.6
4.5 − 5.5
Refer to switch
Positions and loading
conditions in
Figure 22 to 26.
4.3
2.5
2.3
1.6
13.6
7.8
5.6
4.4
25.7
10.7
7.6
5.2
4.3
2.5
2.3
1.6
25.7
10.7
7.6
5.2
4.3
2.5
2.3
1.6
25.7
10.7
7.6
5.2
ns
t
EN
Output Enable
Time, OE
to Y
1.65−1.95
2.3 − 2.7
3.0 − 3.6
4.5 − 5.5
Refer to switch
Positions and loading
conditions in
Figure 22 to 26.
4.2
2.4
2.0
1.7
25.2
11.3
8.0
6.0
4.2
2.4
2.0
1.7
25.2
12.2
8.5
6.5
4.2
2.4
2.0
1.7
25.2
13
8.7
6.7
ns
t
DIS
Output Disable
Time, OE
to Y
1.65−1.95
2.3 − 2.7
3.0 − 3.6
4.5 − 5.5
Refer to switch
Positions and loading
conditions in
Figure 22 to 26.
3.7
2.0
2.1
1.0
15
6.5
5.6
4.5
3.7
2.0
2.1
1.0
15
6.7
5.8
4.7
3.7
2.0
2.1
1.0
15
6.9
5.9
4.9
ns
C
IN
Input
Capacitance
3.3 3.5 pF
C
O
Output
Capacitance
3.3 6.0 pF
C
PD
Power
Dissipation
Capacitance
(Note 6)
3.3 f = 10 MHz 22 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
• V
CC
• f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
• V
CC
2
• f
in
+ I
CC
• V
CC.
P1-P3P4-P6P7-P9P10-P12P13-P15

NLX1G99DMUTWG

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Manufacturer:
ON Semiconductor
Description:
Logic Gates CONFIG MULTIFUNCTION
Lifecycle:
New from this manufacturer.
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