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MBR4060PT-E3/45

P1-P3P4-P4
MBR4035PT thru MBR4060PT
www.vishay.com
Vishay General Semiconductor
Revision: 21-Nov-12
1
Document Number: 88679
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Note
(1)
2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
I
F(AV)
40 A
V
RRM
35 V to 60 V
I
FSM
400 A
V
F
0.60 V, 0.62 V
T
J
max. 150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Maximum working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Maximum average forward rectified current T
C
= 125 °C I
F(AV)
40 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
400 A
Peak repetitive reverse surge current per diode I
RRM
(1)
2.0 1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
- 65 to + 150 °C
Storage temperature range T
STG
- 65 to + 175 °C
MBR4035PT thru MBR4060PT
www.vishay.com
Vishay General Semiconductor
Revision: 21-Nov-12
2
Document Number: 88679
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitve Peak Forward Surge Current
Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum instantaneous forward
voltage per diode
V
F
(1)
I
F
= 20 A T
J
= 25 °C 0.70 0.72
V
I
F
= 20 A T
J
= 125 °C 0.60 0.62
I
F
= 40 A T
J
= 25 °C 0.80 -
I
F
= 40 A T
J
= 125 °C 0.75 -
Maximum instantaneous reverse
current at rated DC blocking
voltage per diode
I
R
(1)
T
J
= 25 °C 1.0
mA
T
J
= 125 °C 100
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Thermal resistance, junction to
case per diode
R
JC
1.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube
0
50
100
150
0
10
20
30
40
50
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
100
200
300
400
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
MBR4035PT thru MBR4060PT
www.vishay.com
Vishay General Semiconductor
Revision: 21-Nov-12
3
Document Number: 88679
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
0.1
1
10
100
100
1000
10 000
Reverse Voltage (V)
Junction Capacitance (pF)
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
P1-P3P4-P4

MBR4060PT-E3/45

Mfr. #:
Buy MBR4060PT-E3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 40 Amp 60 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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