QW-BA023
Page 1
REV:A
Features
- High speed switching.
- Small surface mounting type.
- Low forward voltage.
Dimensions in inches and (millimeter)
SOD-523
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.028(0.70)
0.067(1.70)
0.059(1.50)
0.012(0.30)
Typ.
0.004(0.10)
Typ.
0.020(0.50)
0.028(0.70)
Mechanical data
- Case: SOD-523 standard package, Molded plastic.
- Terminals: Solderable per MIL-STD-750, method 2026
- Weight: 0.012 grams(approx.)
.
- Mounting position: Any
Circuit Diagram
Company reserves the right to improve product design , functions and reliability without notice.
A
mA
V
1
200
10
IFM
VR
IFSM
O
C
O
C
-55 +125to TSTG
Storage temperature range
Maximum (peak) fotward current
DC reverse voltage
Parameter
Conditions
Symbol
Value
Unit
VVF
Forward voltage
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Maximum Ratings A (at T =25°C, unless otherwise noted)
Electrical Characteristics (at T =25°C, unless otherwise noted)A
IF = 1mA
IF = 100mA
VR = 10V
µA
20
IR
0.18
0.50
Reverse current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
-40 +125to TJ
Junction temperature range
Diode capacitance
VR = 0V, f=1MHz
Cd
pF
V
15
VRM
Peak reverse voltage
Non-repetitive peak forward surge
current
O
C
-40 to +100
Top
Operating temperature range
150
Ptot
Total power dissipation
mW
Small Signal Schottky Diodes
mA
100IF
Continuous forward current
1SS389-G
Forward Current: 100 mA
Reverse Voltage: 10 V
RoHS Device
Reverse breakdown voltage
IR = 50µA 10
V
IF = 5mA
0.23 0.30
0.35
20
40
V(BR)R
Comchip Technology CO., LTD.