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BSO220N03MDGXUMA1

P1-P3P4-P6P7-P9
BSO220N03MD G
1 Power dissipation 2 Drain current
P
tot
=f(T
A
); t
p
≤10 s I
D
=f(T
A
); t
p
≤10 s
parameter: V
GS
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 °C
2)
; D =0 Z
thJA
=f(t
p
)
2)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
100 ms
10 s
10
2
10
1
10
0
10
-1
10
2
10
1
10
0
10
-1
10
-2
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
2
10
1
10
0
10
-1
t
p
[s]
Z
thJA
[K/W]
0
0.5
1
1.5
2
2.5
0 40 80 120 160
T
A
[°C]
P
tot
[W]
10 V
4.5 V
0
2
4
6
8
0 40 80 120 160
T
A
[°C]
I
D
[A]
Rev.1.1 page 4 2009-11-19
BSO220N03MD G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
10
20
30
40
50
60
0 5 10 15 20 25 30
I
D
[A]
R
DS(on)
[m
Ω
]
25 °C
150 °C
0
10
20
30
40
50
60
012345
V
GS
[V]
I
D
[A]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
10
20
30
40
50
60
0123
V
DS
[V]
I
D
[A]
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
I
D
[A]
g
fs
[S]
Rev.1.1 page 5 2009-11-19
BSO220N03MD G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=7.7 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f =1 MHz I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
5
10
15
20
25
30
35
40
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
Ω
]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
3
10
2
10
1
10
0
0 102030
V
DS
[V]
C
[pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
2
10
1
10
0
10
-1
0 0.5 1 1.5 2
V
SD
[V]
I
F
[A]
Rev.1.1 page 6 2009-11-19
P1-P3P4-P6P7-P9

BSO220N03MDGXUMA1

Mfr. #:
Buy BSO220N03MDGXUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M
Lifecycle:
New from this manufacturer.
Delivery:
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