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MVB50P03HDLT4G

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 7
1 Publication Order Number:
MTB50P03HDL/D
MTB50P03HDL,
MVB50P03HDLT4G
P-Channel Power MOSFET
50 A, 30 V, Logic Level D
2
PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• MVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
30 Vdc
Drain−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
30 Vdc
Gate−Source Voltage
− Continuous
− Non−Repetitive (t
p
≤ 10 ms)
V
GS
V
GSM
±15
± 20
Vdc
Vpk
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t
p
≤ 10 ms)
I
D
I
D
I
DM
50
31
150
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T
C
= 25°C, when
mounted with min. recommended pad size
P
D
125
1.0
2.5
W
W/°C
W
Operating and Storage Temperature Range T
J
, T
stg
− 55 to 150 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, Peak
I
L
= 50 Apk, L = 1.0 mH, R
G
= 25 W)
E
AS
1250 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient, when mounted with
the minimum recommended pad size
R
q
JC
R
q
JA
R
q
JA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTB
50P03HG
AYWW
1
Gate
4
Drain
2
Drain
3
Source
50 AMPERES
30 VOLTS
R
DS(on)
= 25 mW
D
2
PAK
CASE 418B
STYLE 2
1
2
3
4
P−Channel
MTB50P03H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
MTB50P03HDL, MVB50P03HDLT4G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (C
pk
≥ 2.0) (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
−
−
26
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current
(V
GS
= ±15 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (C
pk
≥ 3.0) (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.5
4.0
2.0
−
Vdc
mV/°C
Static Drain−Source On−Resistance (C
pk
≥ 3.0) (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 25 Adc)
R
DS(on)
− 20.9 25
mW
Drain−Source On−Voltage (V
GS
= 5.0 Vdc)
(I
D
= 50 Adc)
(I
D
= 25 Adc, T
J
=125°C)
V
DS(on)
−
−
0.83
−
1.5
1.3
Vdc
Forward Transconductance
(V
DS
= 5.0 Vdc, I
D
= 25 Adc)
g
FS
15 20 −
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
C
iss
− 3500 4900 pF
Output Capacitance C
oss
− 1550 2170
Transfer Capacitance C
rss
− 550 770
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= 15 Vdc, I
D
= 50 Adc,
V
GS
= 5.0 Vdc, R
G
= 2.3 W)
t
d(on)
− 22 30 ns
Rise Time t
r
− 340 466
Turn−Off Delay Time t
d(off)
− 90 117
Fall Time t
f
− 218 300
Gate Charge (See Figure 8)
(V
DS
= 24 Vdc, I
D
= 50 Adc,
V
GS
= 5.0 Vdc)
Q
T
− 74 100 nC
Q
1
− 13.6 −
Q
2
− 44.8 −
Q
3
− 35 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 50 Adc, V
GS
= 0 Vdc)
(I
S
= 50 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
2.39
1.84
3.0
−
Vdc
Reverse Recovery Time
(See Figure 15)
(I
S
= 50 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
− 106 −
ns
t
a
− 58 −
t
b
− 48 −
Reverse Recovery Stored Charge Q
RR
− 0.246 −
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
− 3.5 − nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
− 7.5 − nH
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
C
pk
=
Max limit − Typ
3 x SIGMA
MTB50P03HDL, MVB50P03HDLT4G
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
I
D
, DRAIN CURRENT (AMPS)
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
20
40
80
100
60
0 0.4 0.8 1.2 1.6 2.0
0
20
40
80
100
Figure 1. On−Region Characteristics
1.5 1.9 2.3 2.7 3.5 4.3
Figure 2. Transfer Characteristics
0 20406080100
0.015
0.017
0.021
0.025
0.029
0.015
0.017
0.019
0.021
0.022
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
-50
0.85
0.95
1.05
1.25
1.35
0 5 10 20 25 30
100
1000
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage
Current versus Voltage
-25 0 25 50 75 100 125 150
60
0.2 0.6 1.0 1.4 1.8 3.9
0.027
0.023
0.019
020406080100
0.020
0.018
0.016
1.15
15
V
GS
= 10 V
4 V
8 V
100°C
25°C
T
J
= -55°C
T
J
= 25°C
10 V
V
GS
= 5 V
V
GS
= 5 V
-55°C
V
GS
= 0 V
T
J
= 125°C
100°C
3 V
3.5 V
T
J
= 25°C
6 V
3.1
V
GS
= 5 V
I
D
= 25 A
T
J
= 100°C
25°C
2.5 V
5 V
4.5 V
V
DS
≥ 5 V
10
P1-P3P4-P6P7-P9

MVB50P03HDLT4G

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Manufacturer:
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Description:
INTEGRATED CIRCUIT
Lifecycle:
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