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IXFB44N100Q3

P1-P3P4-P5
IXFB44N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
- 40ºC
25ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0 10203040506070
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
0.30.40.50.60.70.80.91.01.11.21.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 22A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs1ms
R
DS(on)
Limit
25µs
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_44N100Q3(Q9)03-04-11
IXFB44N100Q3
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P5

IXFB44N100Q3

Mfr. #:
Buy IXFB44N100Q3
Manufacturer:
Littelfuse
Description:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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