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BC847BS-7-F

P1-P3P4-P5
BC847BS
Document number: DS30222 Rev. 13 - 2
1 of 5
www.diodes.com
February 2013
© Diodes Incorporated
BC847BS
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Ultra-Small Surface Mount Package
Ideally Suited for Automated Insertion
For switching and AF Amplifier Application
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BC847BS-7-F AEC-Q101 K1F 7 8 3,000
BC847BSQ-7-F Automotive K1F 7 8 3,000
BC847BS-13-F AEC-Q101 K1F 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Device Schematic
Top View
K1F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
SOT363
e3
BC847BS
Document number: DS30222 Rev. 13 - 2
2 of 5
www.diodes.com
February 2013
© Diodes Incorporated
BC847BS
Maximum Ratings (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
100 mA
Peak Collector Current
I
CM
200 mA
Peak Base Current
I
BM
200 mA
Thermal Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50 — — V
I
C
= 100A, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
45 — — V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6 — — V
I
E
= 100A, I
C
= 0
DC Current Gain
h
FE
200 — 450 —
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
— —
100
400
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE
(
sat
)
— 755 — mV
I
C
= 10mA, I
B
= 0.5mA
Base-Emitter Voltage
V
BE
(
on
)
580 665 700 mV
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Cutoff Current
I
CBO
—
—
—
—
20
5.0
nA
µA
V
CB
= 40V
V
CB
= 40V, T
A
= +125°C
Emitter-Cutoff Current
I
EBO
— — 100 nA
V
EB
= 5.0V, I
C
= 0
Gain Bandwidth Product
f
T
100 — — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
— 2.0 3.0 pF
V
CB
= 10V, f = 1.0MHz
Emitter-Base Capacitance
C
EBO
— 11 — pF
V
EB
= 0.5V, f = 1.0MHz
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
BC847BS
Document number: DS30222 Rev. 13 - 2
3 of 5
www.diodes.com
February 2013
© Diodes Incorporated
BC847BS
Typical Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
0
50
100
150
200
250
0120200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
16040 80
1
10
100
1,000
1.0101000.10.01
h D
C
C
U
R
R
E
N
T
G
AI
N
FE,
I , COLLECTOR CURRENT (mA)
Figure 2 Typical DC Current Gain vs. Collector Current
C
0
0.1
0.2
0.3
0.4
0.5
0.1 1.0 10 100
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
C
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
100
1,000
0.1 1.0 10 100
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
C
T = 25C
A
°
V = 10V
CE
5V
2V
Figure 4 Typical Gain-Bandwidth Product
vs. Collector Current
P1-P3P4-P5

BC847BS-7-F

Mfr. #:
Buy BC847BS-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
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