TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
2/9
Version: A14
Thermal Performance
Parameter Symbol
Limit
Unit
ITO-220
IPAK/DPAK
Junction to Case Thermal Resistance R
ӨJC
3.8 1
o
C/W
Junction to Ambient Thermal Resistance R
ӨJA
62
o
C/W
Electrical Specifications
(T
J
=25
o
C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
(Note 4)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
600 -- --
V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
2 4
V
Gate Body Leakage V
GS
= ±30V, V
DS
= 0V I
GSS
-- -- ±100
nA
Zero Gate Voltage Drain Current V
DS
= 600V, V
GS
= 0V I
DSS
-- -- 1
µA
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 5.5A
R
DS(ON)
-- 0.31 0.38
Ω
Dynamic
(Note 5)
Total Gate Charge
V
DS
= 380V, I
D
= 11A,
V
GS
= 10V
Q
g
-- 20.5 --
nC
Gate-Source Charge Q
gs
-- 4.8 --
Gate-Drain Charge Q
gd
-- 6.5 --
Input Capacitance
V
DS
= 100V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 1040
--
pF
Output Capacitance C
oss
-- 66 --
Gate Resistance f=1MHz, open drain R
g
-- 3.2 -- Ω
Switching
(Note 6)
Turn-On Delay Time
V
DD
= 380V,
R
GEN
= 35Ω,
I
D
= 11A, V
GS
= 10V,
t
d(on)
-- 24 --
ns
Turn-On Rise Time t
r
-- 28 --
Turn-Off Delay Time t
d(off)
-- 70 --
Turn-Off Fall Time t
f
-- 60 --
Source-Drain Diode
(Note 4)
Forward On Voltage
I
S
=11A, V
GS
=0V V
SD
-- -- 1.4 V
Reverse Recovery Time
V
R
=200V, I
S
=5.5A
dI
F
/dt=100A/µs
t
rr
-- 210 -- ns
Reverse Recovery Charge
Q
rr
-- 1.8 -- µC
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L=50mH, I
AS
=2.6A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25
o
C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
