2001 Oct 19 3
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
S
=5V; I
S
=12.6mA; f=1GHz; T
j
=25C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled 6V
I
S
supply current 20 mA
P
tot
total power dissipation T
s
80 C 200 mW
T
stg
storage temperature 65 +150 C
T
j
operating junction temperature 150 C
P
D
maximum drive power 10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to solder
point
P
tot
= 200 mW; T
s
80 C300K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current 10 12.6 16 mA
|s
21
|
2
insertion power gain f = 1 GHz 13.1 dB
f=2GHz 13.9 dB
R
L
IN
return losses input f = 1 GHz 11 dB
f=2GHz 10 dB
R
L
OUT
return losses output f = 1 GHz 18 dB
f=2GHz 13 dB
NF noise figure f = 1 GHz 4.8 dB
f=2GHz 4.8 dB
BW bandwidth at s
21
2
3 dB below flat gain at 1 GHz 3.6 GHz
P
L(sat)
saturated load power f = 1 GHz 2.8 dBm
f=2GHz 0.6 dBm
P
L 1 dB
load power at 1 dB gain compression; f = 1 GHz 0.7 dBm
at 1 dB gain compression; f = 2 GHz 1.8 dBm
IP3
(in)
input intercept point f = 1 GHz 4.8 dBm
f=2GHz 8.5 dBm
IP3
(out)
output intercept point f = 1 GHz 8.3 dBm
f=2GHz 5.4 dBm
