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MMBF170-7-F

P1-P3P4-P5
MMBF170
Document number: DS30104 Rev. 14 - 2
1 of 5
www.diodes.com
May 2014
© Diodes Incorporated
MMBF170
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number Case Packaging
MMBF170-7-F SOT23 3000/Tape & Reel
MMBF170-13-F SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
Equivalent Circuit
To
p
View
D
G
S
K6Z = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y
̅
= Year (ex: A = 2014)
M = Month (ex: 9 = September)
Shanghai A/T SiteChengdu A/T Site
D
S
G
MMBF170
Document number: DS30104 Rev. 14 - 2
2 of 5
www.diodes.com
May 2014
© Diodes Incorporated
MMBF170
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
1.0MΩ V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
20
40
V
Drain Current (Note 5) Continuous
Pulsed
I
D
500
800
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
300
1.80
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
θJA
417 K/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70
V
V
GS
= 0V, I
D
= 100μA
Zero Gate Voltage Drain Current
I
DSS
1.0 µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
10
nA
V
GS
= 15V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.8 2.1 3.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)


5.0
5.3
Ω
V
GS
= 10V, I
D
= 200mA
V
GS
= 4.5V, I
D
= 50mA
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
22 40 pF
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
11 30 pF
Reverse Transfer Capacitance
C
rss
2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
10 ns
V
DD
= 25V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50Ω
Turn-Off Time
t
off
10 ns
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
MMBF170
Document number: DS30104 Rev. 14 - 2
3 of 5
www.diodes.com
May 2014
© Diodes Incorporated
MMBF170
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45
70
95 120 145
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 1012141618
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 5 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
P1-P3P4-P5

MMBF170-7-F

Mfr. #:
Buy MMBF170-7-F
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V 225mW
Lifecycle:
New from this manufacturer.
Delivery:
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