VB10150C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 30-Aug-13
1
Document Number: 87991
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.63 V at I
F
= 3 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
Package TO-263AB
I
F(AV)
2 x 5.0 A
V
RRM
150 V
I
FSM
60 A
V
F
at I
F
= 10 A 0.69 V
T
J
max. 150 °C
Diode variations Common cathode
TMBS
®
TO-263AB
1
2
K
PIN 1
PIN 2
K
HEATSINK
VB10150C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VB10150C UNIT
Maximum repetitive peak reverse voltage V
RRM
150 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
60
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MIN. UNIT
Instantaneous forward voltage
per diode
(1)
I
F
= 3.0 A
T
A
= 25 °C
V
F
0.82 -
V
I
F
= 5.0 A 0.99 1.41
I
F
= 3.0 A
T
A
= 125 °C
0.63 -
I
F
= 5.0 A 0.69 0.75
Reverse current per diode
(2)
V
R
= 100 V
T
A
= 25 °C
I
R
0.5 - μA
T
A
= 125 °C 0.5 - mA
V
R
= 150 V
T
A
= 25 °C - 100 μA
T
A
= 125 °C 1 10 mA
