JANTX2N918UB

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
T4-LDS-0010 Rev. 3 (101342) Page 1 of 4
DEVICES LEVELS
2N918 2N918UB JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
15 Vdc
Collector-Base Voltage V
CBO
30 Vdc
Emitter-Base Voltage V
EBO
3.0 Vdc
Collector Current I
C
50 mAdc
Total Power Dissipation @ T
A
= +25°C
(1)
P
T
200 mW
Operating & Storage Junction Temperature Range T
op
& T
stg
-65 to +200 °C
Note: 1) Derate linearly 1.14mW/°C above T
A
> 25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 3mAdc
V
(BR)CEO
15 Vdc
Collector-Base Cutoff Current
V
CB
= 30Vdc
V
CB
= 25Vdc
V
CB
= 25Vdc; T
A
= +150°C
I
CBO
1.0
10
1.0
µAdc
ηAdc
µAdc
Emitter-Base Cutoff Current
V
EB
= 3.0Vdc
V
EB
= 2.5Vdc
I
EBO
10
10
µAdc
ηAdc
Forward-Current Transfer Ratio
I
C
= 0.5mAdc, V
CE
= 10Vdc
I
C
= 3.0mAdc, V
CE
= 1.0Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 3.0mAdc, V
CE
= 1.0Vdc; T
A
= -55°C
h
FE
10
20
20
10
200
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
V
CE(sat)
0.4 Vdc
Base-Emitter Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
V
BE(sat)
1.0 Vdc
TO-72
2N918
3 PIN
2N918UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0010 Rev. 3 (101342) Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio
I
C
= 4mAdc, V
CE
= 10Vdc, f = 100MHz
|h
fe
| 6.0 18
Output Capacitance
V
CB
= 0Vdc, I
E
= 0, 100kHz f 1.0MHz
V
CB
= 10Vdc, I
E
= 0, 100kHz f 1.0MHz
C
obo1
C
obo2
3.0
1.7
pF
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz f 1.0MHz
C
ibo
2.0 pF
Noise Figure (1)
V
CE
= 6V, I
C
= 1.0mA, f = 60MHz
g
s
= 2.5mmho
NF
6.0 dB
Small-Signal Power Gain (1)
V
CB
= 12V, I
C
= 6.0mA, f = 200MHz
G
pe
15
dB
Collector-Base Time Constant (1)
V
CB
= 10V, I
E
= -4.0mA, f = 79.8MHz
R
b’CC
25 ps
Oscillator Power Output (1)
V
CB
= 1.5V, I
C
= 8.0mA, f 500MHz
P
o
30
mW
Collector Efficiency
V
CB
= 15V, I
C
= 8.0mA, f > 500MHz
n 25
%
NOTES:
(1) For more detail see MIL-PRF-19500/301
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0010 Rev. 3 (101342) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3.
Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4.
Dimension TL measured from maximum HD.
5.
Body contour optional within zone defined by HD, CD, and Q.
6.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch
(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8.
All four leads.
9.
Dimension r (radius) applies to both inside corners of tab.
10.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
11.
Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
FIGURE 1. Physical dimensions for 2N918 (TO-72).
Symbol
Dimensions
Inches Millimeters Note
Min Max Min Max
CD .178 .195 4.52 4.95 5
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.84 5
LC .100 TP 2.54 TP 7,8
LD .016 .021 .406 .533 7,8
LL .500 .750 12.70 19.05 7,8
LU .016 .019 .406 .483
L1 .050 1 .27
L2 .250 6.35
P .100 2.54
Q .040 1.02 5
TL .028 .048 .71 1.22
TW .036 .046 .91 1.17
r .007 .18
α 45° TP

JANTX2N918UB

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Small-Signal BJT
Lifecycle:
New from this manufacturer.
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