KSC1507YTU

©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

KSC1507

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 300 V

V

CEO

Collector-Emitter Voltage 300 V

V

EBO

Emitter-Base Voltage 7 V

I

C

Collector Current 0.2 mA

P

C

Collector Dissipation (T

C

=25°C) 15 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 100µA, I

E

= 0 300 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 10mA, I

B

= 0 300 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= - 10µA, I

C

= 0 7 V

I

CBO

Collector Cut-off Current V

CB

= 200V, I

E

= 0 100 µA

h

FE

DC Current Gain V

CE

= 10V, I

C

= 10mA 40 240

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 50mA, I

B

= 5mA 2.0 V

f

T

Current Gain Bandwidth Product V

CE

= 30V, I

C

= 10mA 40 80 MHz

C

ob

Output Capacitance V

CB

= 50V, I

E

= 0,

f = 1MHz

4pF

Classification R O Y

h

FE

40 ~ 80 70 ~ 140 120 ~ 240

KSC1507

Color TV Chroma Output

• High Collector-Emitter Voltage : V

CEO

=300V

• Current Gain Bandwidth Product : f

T

=40MHz (Min.)

1.Base 2.Collector 3.Emitter

1

TO-220

©2002 Fairchild Semiconductor Corporation

KSC1507

Rev. A3, September 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Power Derating

0 20406080100120140160180200

0

2

4

6

8

10

12

14

16

18

20

I

B

= 140µA

I

B

= 120µA

I

B

= 100µA

I

B

= 80µA

I

B

= 60µA

I

B

= 40µA

I

B

= 20

µ

A

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

110100

10

100

1000

V

CE

= 10V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

1 10 100 1000

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

1 10 100

1

10

I

E

=0

f=1MHz

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

0 25 50 75 100 125 150

0

5

10

15

20

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

Package Dimensions

KSC1507

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation

Rev. A3, September 2002

4.50

±0.20

9.90

±0.20

1.52

±0.10

0.80

±0.10

2.40

±0.20

10.00

±0.20

1.27

±0.10

ø3.60

±0.10

(8.70)

2.80

±0.10

15.90

±0.20

10.08

±0.30

18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20

±0.20

13.08

±0.20

1.30

±0.10

1.30

+0.10

–0.05

0.50

+0.10

–0.05

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

TO-220

KSC1507YTU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Epitaxial Sil

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet