MCC250-08IO1

© 2004 IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions
MCC 250
MCD 250
419
Symbol Conditions Maximum Ratings
I
TRMS
, I
FRMS
T
VJ
= T
VJM
450 A
I
TAVM
, I
FAVM
T
C
= 85°C; 180° sine 287 A
I
TSM
, I
FSM
T
VJ
= 45°C t = 10 ms (50 Hz), sine 9000 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 9600 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 7800 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 8500 A
i
2
dt T
VJ
= 45°C t = 10 ms (50 Hz), sine 405 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 380 000 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 304 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 300 000 A
2
s
(di/dt)
cr
T
VJ
= T
VJM
; repetitive, I
T
= 860 A 100 A/μs
f = 50 Hz; t
P
= 200 μs
V
D
=
2
/
3
V
DRM
I
G
= 1 A; non repetitive, I
T
= 290 A 800 A/μs
di
G
/dt = 1 A/μs
(dv/dt)
cr
T
VJ
= T
VJM
;V
DR
=
2
/
3
V
DRM
1000 V/μs
R
GK
= ; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;t
P
= 30 μs 120 W
I
T
= I
TAVM
;t
P
= 500 μs 60 W
P
GAV
20 W
V
RGM
10 V
T
VJ
-40...+140 °C
T
VJM
140 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS; t = 1 min 3000 V~
I
ISOL
1 mA; t = 1 s 3600 V~
M
d
Mounting torque (M5) 2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.
Weight Typical including screws 320 g
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V Version 1 Version 1
900 800 MCC 250-08io1 MCD 250-08io1
1300 1200 MCC 250-12io1 MCD 250-12io1
1500 1400 MCC 250-14io1 MCD 250-14io1
1700 1600 MCC 250-16io1 MCD 250-16io1
1900 1800 MCC 250-18io1 MCD 250-18io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
Advantages
Space and weight savings
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
I
TRMS
= 2x450 A
I
TAVM
= 2x287 A
V
RRM
= 800-1800 V
Thyristor Modules
Thyristor/Diode Modules
7
6
5
4
2
3
1
MCD
MCC
3671 542
31542
© 2004 IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions
MCC 250
MCD 250
419
Symbol Conditions Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
70 mA
I
DRM
40 mA
V
T
, V
F
I
T
/I
F
= 600 A; T
VJ
= 25°C 1.36 V
V
T0
For power-loss calculations only (T
VJ
= 140°C) 0.85 V
r
T
0.82 mΩ
V
GT
V
D
= 6 V; T
VJ
= 25°C 2 V
T
VJ
= -40°C 3 V
I
GT
V
D
= 6 V; T
VJ
= 25°C 150 mA
T
VJ
= -40°C 200 mA
V
GD
T
VJ
= T
VJM
;V
D
=
2
/
3
V
DRM
0.25 V
I
GD
10 mA
I
L
T
VJ
= 25°C; t
P
= 30 μs; V
D
= 6 V 200 mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/μs
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
= 150 mA
t
gd
T
VJ
= 25°C; V
D
= ½ V
DRM
s
I
G
= 1 A; di
G
/dt = 1 A/μs
t
q
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200 μs; -di/dt = 10 A/μs typ. 200 μs
V
R
= 100 V; dv/dt = 50 V/μs; V
D
=
2
/
3
V
DRM
Q
S
T
VJ
= 125°C; I
T
/I
F
= 400 A, -di/dt = 50 A/μs 760 μC
I
RM
275 A
R
thJC
per thyristor/diode; DC current 0.129 K/W
per module other values 0.0645 K/W
R
thJK
per thyristor/diode; DC current see Fig. 8/9 0.169 K/W
per module 0.0845 K/W
d
S
Creepage distance on surface 12.7 mm
d
A
Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC MCD
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250, material brass
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
20 12
14
© 2004 IXYS All rights reserved
3 - 4
IXYS reserves the right to change limits, test conditions and dimensions
MCC 250
MCD 250
419
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4 i
2
dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature

MCC250-08IO1

Mfr. #:
Manufacturer:
Description:
Discrete Semiconductor Modules 250 Amps 800V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union