2007-03-29
BFP181
1
1
2
3
4
NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
• f
T
= 8 GHz, F = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP181 RFs
1 = C 2 = E 3 = B 4 = E - - SOT143
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
20 mA
Base current I
B
2
Total power dissipation
2)
T
S
≤ 75 °C
P
tot
175 mW
Junction temperature T
150 °C
Ambient temperature T
-65 ... 150
Storage temperature T
st
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
3)
R
thJS
≤ 430
K/W
1
Pb-containing package may be available upon special request
2
T
S
is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance
