© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 11
1 Publication Order Number:
MC14001B/D
MC14001B Series
B-Suffix Series CMOS Gates
MC14001B, MC14011B, MC14023B,
MC14025B, MC14071B, MC14073B,
MC14081B, MC14082B
The B Series logic gates are constructed with P and N channel
enhancement mode devices in a single monolithic structure
(Complementary MOS). Their primary use is where low power
dissipation and/or high noise immunity is desired.
Features
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• All Outputs Buffered
• Capable of Driving Two Low−power TTL Loads or One Low−power
Schottky TTL Load Over the Rated Temperature Range.
• Double Diode Protection on All Inputs Except: Triple Diode
Protection on MC14011B and MC14081B
• Pin−for−Pin Replacements for Corresponding CD4000 Series
B Suffix Devices
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage Range −0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
−0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
± 10 mA
P
D
Power Dissipation, per Package
(Note 1)
500 mW
T
A
Ambient Temperature Range −55 to +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature
(8−Second Soldering)
260 °C
V
ESD
ESD Withstand Voltage
Human Body Model
Machine Model
Charged Device Model
> 3000
> 300
N/A
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
≤ (V
in
or V
out
) ≤ V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
Device Description
DEVICE INFORMATION
MC14001B Quad 2−Input NOR Gate
MC14011B Quad 2−Input NAND Gate
MC14023B Triple 3−Input NAND Gate
MC14025B Triple 3−Input NOR Gate
MC14071B Quad 2−Input OR Gate
MARKING DIAGRAMS
SOIC−14
D SUFFIX
CASE 751A
TSSOP−14
DT SUFFIX
CASE 948G
1
14
140xxBG
AWLYWW
14
0xxB
ALYWG
G
1
14
xx = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
MC14073B Triple 3−Input AND Gate
MC14081B Quad 2−Input AND Gate
MC14082B Dual 4−Input AND Gate
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
(Note: Microdot may be in either location)
SOIC−14 TSSOP−14
