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NCV7721D2R2G

P1-P3P4-P6P7-P9P10-P12
NCV7721
www.onsemi.com
4
Table 2. MAXIMUM RATINGS (Voltages are with respect to device substrate.)
Rating
Value Unit
Power Supply Voltage (V
S
)
DC
AC, t < 500 ms, I
Vs
> −2 A
−0.3 to 40
−1
V
Output Pin OUTx
DC
AC, t < 500 ms, I
Vs
> −2 A
−0.3 to 40
−1
V
Pin Voltage
(IN1, IN2, EN, VCC)
(FLTB)
−0.3 to 5.5
−0.3 to (VCC + 0.3)
V
Output Current (OUTx)
DC
AC, 50 ms pulse, 1s period
−1.8 to 1.8
−4.0 to 4.0
A
Electrostatic Discharge, Human Body Model
(V
S
, OUT1, OUT2) (Note 3)
6 kV
Electrostatic Discharge, Human Body Model
All other pins (Note 3)
2 kV
Electrostatic Discharge, Machine Model
All pins
200 V
Moisture Sensitivity Level MSL3 −
Operating Junction Temperature, T
J
−40 to 150 °C
Storage Temperature Range −55 to 150 °C
Peak Reflow Soldering Temperature: Lead−free
60 to 150 seconds at 217°C (Note 4)
260 peak °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Thermal Parameters
Test Conditions (Typical Value) Unit
14 Pin Fused SOIC Package Min−pad board
(Note 1)
1″ pad board
(Note 2)
Junction−to−Lead (psi−JL8, Y
JL8
) or Pins 1, 7, 8, 14
23 22 °C/W
Junction−to−Ambient (R
q
JA
, q
JA
)
122 83 °C/W
1. 1−oz copper, 67 mm
2
copper area, 0.062″ thick FR4.
2. 1−oz copper, 645 mm
2
copper area, 0.062″, thick FR4.
3. This device series incorporates ESD protection and is characterized by the following methods:
ESD HBM according to AEC−Q100−002 (EIA/JESD22−A114)
ESD MM according to AEC−Q100−003 (EIA/JESD22−A115)
4. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D,
and Application Note AND8003/D.
NCV7721
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5
Table 3. ELECTRICAL CHARACTERISTICS
(−40°C ≤ T
J
≤ 150°C, 5.5 V < V
S
< 40 V, 3.15 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified.)
Characteristic
Conditions Min Typ Max Unit
GENERAL
Supply Current (V
S
)
Sleep Mode (Note 5)
V
S
= 13.2 V, OUTx = 0 V
EN = IN1 = IN2 = 0 V
0 V < V
CC
< 5.25 V
T
J
= −40°C to 85°C
V
S
= 13.2 V, OUTx = 0 V
EN = IN1 = IN2 = 0 V
0 V < V
CC
< 5.25 V
T
J
= 25°C
−
−
1.0
−
5.0
2.0
mA
mA
Supply Current (V
S
)
Active Mode
EN = V
CC
, 5.5 V < V
S
< 35 V
No Load
− 2.0 4.0 mA
Supply Current (VCC)
Sleep Mode (Note 6)
EN = IN1 = IN2 = 0 V
T
J
= −40°C to 85°C
− 0.1 2.5
mA
Supply Current (VCC)
Active Mode
EN = V
CC
− 1.5 3.0 mA
VCC Power−On_Reset Threshold − 2.55 2.90 V
V
S
Undervoltage Detection Threshold
Hysteresis
V
S
decreasing 3.7
100
4.1
365
4.5
450
V
mV
V
S
Overvoltage Detection Threshold
Hysteresis
V
S
increasing 33.0
1.0
36.5
2.5
40.0
4.0
V
Thermal Shutdown Threshold (Note 4) 155 175 195 °C
OUTPUTS
Output Rds(on) (Source)
Iout = −500 mA − − 1.7
W
Output Rds(on) (Sink) Iout = 500 mA − − 1.7
W
Source Leakage Current
Sum of OUT1 and OUT2
OUTx = 0 V, V
S
= 40 V, EN = 0 V
IN1 = IN2 = 0 V
0 V < VCC < 5.25 V
Sum(I(OUTx)
OUTx = 0 V, V
S
= 40 V, EN = 0 V
IN1 = IN2 = 0 V
0 V < VCC < 5.25 V, T
J
= 25°C
Sum(I(OUTx)
−5.0
−1.0
−
−
−
−
mA
Sink Leakage Current OUTx = V
S
= 40 V, EN = 0 V
IN1 = IN2 = 0 V
0V < VCC < 5.25 V
OUTx = V
S
= 13.2 V, EN = 0 V
IN1 = IN2 = 0 V
0 V < VCC < 5.25 V, T
J
= 25°C
−
−
−
−
300
10
mA
Under Load Detection Threshold Source
Sink
−17
2.0
−7.0
7.0
−2.0
17
mA
Power Transistor Body Diode Forward Voltage I
f
= 500 mA − 0.9 1.3 V
NCV7721
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6
Table 3. ELECTRICAL CHARACTERISTICS
(−40°C ≤ T
J
≤ 150°C, 5.5 V < V
S
< 40 V, 3.15 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified.)
Characteristic UnitMaxTypMinConditions
OVERCURRENT
Overcurrent Shutdown Threshold (OUTHx) VCC = 5 V, V
S
= 13.2 V −2.0 −1.45 −1.1 A
Overcurrent Shutdown Threshold (OUTLx) VCC = 5 V, V
S
= 13.2 V 1.1 1.45 2.0 A
CURRENT LIMIT
Current Limit (OUTHx) VCC = 5 V, V
S
= 13.2 V −5.0 −3.0 −2.0 A
Current Limit (OUTLx) VCC = 5 V, V
S
= 13.2 V 2.0 3.0 5.0 A
LOGIC INPUTS (EN, IN1, IN2)
Input Threshold High
Low
2.0
−
−
−
−
0.8
V
Input Hysteresis 100 400 800 mV
Pulldown Resistance 50 125 250
kW
Input Capacitance − 10 15 pF
LOGIC OUTPUT (FLTB)
Output Low I
FLTB
= 1.25 mA
I
FLTB
= 10 mA
−
−
0.08
0.6
0.25
1.1
V
Output Leakage EN = 5 V, 0 V < FLTB < VCC − − 1
mA
TIMING SPECIFICATIONS
Under Load Detection Time 200 350 600
ms
Overcurrent Shutdown Delay Time
V
S
= 13.2 V, R
load
= 25 W
10 25 50
ms
High Side Turn−on Time
V
S
= 13.2 V, R
load
= 25 W
− 7.5 15
ms
High Side Turn−off Time
V
S
= 13.2 V, R
load
= 25 W
− 3.0 6.0
ms
Low Side Turn−on Time
V
S
= 13.2 V, R
load
= 25 W
− 6.5 15
ms
Low Side Turn−off Time
V
S
= 13.2 V, R
load
= 25 W
− 3.0 6.0
ms
High Side Rise Time
V
S
= 13.2 V, R
load
= 25 W
− 5.0 10
ms
High Side Fall Time
V
S
= 13.2 V, R
load
= 25 W
− 2.0 5.0
ms
Low Side Rise Time
V
S
= 13.2 V, R
load
= 25 W
− 1.0 3.0
ms
Low Side Fall Time
V
S
= 13.2 V, R
load
= 25 W
− 1.0 3.0
ms
NonOverlap Time High Side Turn−off to Low Side Turn−on 1.0 − −
ms
NonOverlap Time Low Side Turn−off to High Side Turn on 1.0 − −
ms
Enable Turn−on Time
(high−side driver)
INx = high, R
load
= 25 W to GND
EN going high through 50% to OUTx going
high through 50%
− 50 −
ms
Enable Turn−on Time
(low−side driver)
INx = low, R
load
= 25 W to V
S
EN going high through 50% to OUTx going
low through 50%
− 50 −
ms
Enable Turn−off Time
(high−side driver)
INx = high, R
load
= 25 W to GND
EN going low through 50% to OUTx going
low through 50%
− 2.5 −
ms
Enable Turn−off Time
(low−side driver)
INx = low, R
load
= 25 W to V
S
EN going low through 50% to OUTx going
high through 50%
− 2.5 −
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P9P10-P12

NCV7721D2R2G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
Gate Drivers AUTOMOTIVE DRIVER
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