FFPF10U30DNTU

©2001 Fairchild Semiconductor Corporation

FFPF10U30DN

Rev. A1, March 2001

ULTRA FAST RECOVERY POWER RECTIFIER

Absolute Maximum Ratings (per diode) T

C

=25°

°°

°C unless otherwise noted

Thermal Characteristics

Electrical Characteristics

(per diode) T

C

=25 °

°°

°C unless otherwise noted

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Symbol Parameter Value Units

V

RRM

Peak Repetitive Reverse Voltage 300 V

I

F(AV)

Average Rectified Forward Current @ T

C

= 100°C10 A

I

FSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

100 A

T

J,

T

STG

Operating Junction and Storage Temperature - 65 to +150 °C

Symbol Parameter Value Units

R

θJC

Maximum Thermal Resistance, Junction to Case 2.1 °C/W

Symbol Parameter Min. Typ. Max. Units

V

FM

*

Maximum Instantaneous Forward Voltage

I

F

= 10A

I

F

= 10A

T

C

= 25 °C

T

C

= 100 °C

-

-

-

-

1.2

1.1

V

I

RM

*

Maximum Instantaneous Reverse Current

@ rated V

R

T

C

= 25 °C

T

C

= 100 °C

-

-

-

-

10

100

µA

t

rr

I

rr

Q

rr

Maximum Reverse Recovery Time

Maximum Reverse Recovery Current

Maximum Reverse Recovery Charge

(I

F

=10A, di/dt = 200A/µs)

-

-

-

-

-

-

60

4.5

135

ns

A

nC

W

AVL

Avalanche Energy 1.0 - - mJ

FFPF10U30DN

Features

• Ultrafast with soft recovery

• Low forward voltage

Applications

• Power switching circuits

• Output rectifiers

• Freewheeling diodes

• Switching mode power supply

TO-220F

1 2 3

1. Anode 2.Cathode 3. Anode

©2001 Fairchild Semiconductor Corporation Rev. A1, March 2001

FFPF10U30DN

Typical CharacteristicsTypical Characteristics

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

Figure 3. Typical Junction Capacitance

Figure 5. Typical Reverse Recovery Current

vs. di/dt

Figure 2. Typical Reverse Current

vs. Reverse Voltage

Figure 4. Typical Reverse Recovery Time

vs. di/dt

Figure 6. Forward Current Derating Curve

0.1

1

10

50

0.0 0.5 1.0 1.5 2.0

T

C

= 25

o

C

T

C

= 100

o

C

Forward Voltage , V

F

[V]

Forward Current , I

F

[A]

0.1 1 10 100

0

50

100

150

200

250

Typical Capacitance

at 0V = 239 pF

Capacitance , Cj [pF]

Reverse Voltage , V

R

[V]

100 500

0

1

2

3

4

5

6

7

8

I

F

= 10A

T

C

= 25

o

C

Reverse Recovery Current , I

rr

[A]

di/dt [A/µs]

0 50 100 150 200 250 300

0.001

0.01

0.1

1

10

100

1000

T

C

= 25

o

C

T

C

= 100

o

C

Reverse Current , I

R

[µA]

Reverse Voltage , V

R

[V]

100 500

30

40

50

60

I

F

= 10A

Tc = 25

o

C

Reverse Recovery Time , t

rr

[ns]

di/dt [A/

µ

s]

60 80 100 120 140 160

0

5

10

15

DC

Average Forward Current , I

F(AV)

[A]

Case Temperature , T

C

[

o

C]

©2001 Fairchild Semiconductor Corporation

Rev. A, March 2001

FFPF10U30DN

Package Dimensions

Dimensions in Millimeters

TO-220F

(7.00)

(0.70)

MAX1.47

(30°)

#1

3.30

±0.10

15.80

±0.20

15.87

±0.20

6.68

±0.20

9.75

±0.30

4.70

±0.20

10.16

±0.20

(1.00x45°)

2.54

±0.20

0.80

±0.10

9.40

±0.20

2.76

±0.20

0.35

±0.10

ø3.18

±0.10

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

0.50

+0.10

–0.05

FFPF10U30DNTU

Mfr. #:

Buy FFPF10U30DNTU

Manufacturer:

ON Semiconductor / Fairchild

Description:

Rectifiers 10A/300V

Lifecycle:

New from this manufacturer.

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FFPF10U30DNTU