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VCUT03E1-SD0HG4-08

P1-P3P4-P6
VCUT03E1-SD0
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 13-Jul-16
1
Document Number: 85909
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode
in Silicon Package
MARKING (example only)
1 = year code
Open circle = month code and pin 1
XY = type code
FEATURES
• Ultra compact CLP0603 package
• Low package height < 0.3 mm
• 1-line ESD-protection
• AEC-Q101 qualified available
• Working range ± 3.3 V
• Low leakage current < 0.1 μA
• Low load capacitance C
D
< 14 pF
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Lead plating: Au (e4)
• Lead material: Ni
• Topside coating
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
0.3
0.27
0.6
22544
22543
XY
1
22454
ORDERING INFORMATION
PART NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE
ORDERING CODE
(EXAMPLE)
AEC-Q101
QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE TERMINATIONS
GOLD
PLATED
15K PER 7" REEL
(8 mm TAPE)
15K/BOX = MOQ
GREEN
VCUT03E1-SD0 - G 4 -08 VCUT03E1-SD0-G4-08
VCUT03E1-SD0 H G 4 -08 VCUT03E1-SD0HG4-08
PACKAGE DATA
DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT SOLDERING CONDITIONS
VCUT03E1-SD0 CLP0603 3E 0.12 mg
260 °C/10 s at terminals
Reflow soldering according JEDEC
®
STD-020
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current acc. IEC 61000-4-5, 8/20 μs/single shot I
PPM
6A
Peak pulse power
Pin 1 to pin 2
acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
P
PP
78 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30
Operating temperature Junction temperature T
J
-55 to +150 °C
Storage temperature T
stg
-55 to +150 °C
VCUT03E1-SD0
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 13-Jul-16
2
Document Number: 85909
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CUT THE SPIKES WITH VCUT03E1-SD0
The VCUT03E1-SD0 is a Bidirectional and Symmetrical (BiSy) ESD-protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT03E1-SD0 offers a high
isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package
size of the tiny CLP0603 package the line inductance is very low, so that fast transients like and ESD-strike can be clamped
with minimal over- or undershoots.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
- - 1 lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--3.3V
Reverse voltage at I
R
= 0.1 μA V
R
3.3 - - V
Reverse current at V
RWM
= 3.3 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
6.5 8 9 V
Reverse clamping voltage
at I
PP
= 1 A V
C
-8.810V
at I
PP
= I
PPM
= 6 A V
C
-1113V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
-1314pF
at V
R
= 2.5 V; f = 1 MHz C
D
-11-pF
Clamping voltage
Transmission Line Pulse (TLP); t
p
= 100 ns
I
TLP
= 8 A
V
C-TLP
-9.8- V
Clamping voltage
Transmission Line Pulse (TLP); t
p
= 100 ns
I
TLP
= 16 A
V
C-TLP
-11- V
Dynamic resistance Transmission Line Pulse (TLP); t
p
= 100 ns R
DYN
-0.15- Ω
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
VCUT03E1-SD0
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 13-Jul-16
3
Document Number: 85909
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Fig. 5 - Typical Peak Clamping Voltage V
C
vs.
Peak Pulse Current I
PP
Fig. 6 - Typical Clamping Performance at 8 kV Contact Discharge
acc. IEC 61000-4-2
Fig. 7 - Typical Clamping Performance at 8 kV Contact Discharge
acc. IEC 61000-4-2
Fig. 8 - Typical Clamping Voltage at 100 ns Transmission Line Pulse
(TLP)
V
R
(V)
C
D
(pF)
16
18
20
10
12
14
4
6
8
0
2
0 1 2 3 4 5 6
Ta = 25 °C
Ta = +150 °C
f = 1 MHz
22695
I
R
in µA
V
R
in V
8
9
10
5
6
7
2
3
4
0
1
0.01 0.1 1 10 100 1000 10 000 100 000
22696
Ta = -50 °C
Ta = 25 °C
Ta = 150 °C
12
14
8
10
4
6
0
2
0 1 2 3 4 5 6 7
Measured acc. to IEC 61000-4-5
(8/20 μs - wave form)
V
C
Ta = at 25 °C
Ta = at 150 °C
V
C
in (V)
I
PP
in (A)
22697
- 5
- 10
- 15
- 20
- 25
- 30
- 35
- 40
- 45
0
5
10
- 10
0 102030405060708090
Acc. IEC 61000-4-2
- 8 kV
contact discharge
t (ns)
V
C-ESD
(V)
22569
- 5
0
5
10
15
20
25
30
35
40
- 10
- 10
0 102030405060708090
t (ns)
V
C-ESD
(V)
Acc. IEC 61000-4-2
+ 8 kV
contact discharge
22570
V
C-TLP
in V
I
TLP
in A
22731
50
60
30
40
10
20
0
0 5 10 15 20
Transmission Line Pulse (TLP)
t
p
= 100 ns
(Average between
55 ns and 95 ns)
V
C-TLP
= 0.15 Ω x I
TLP
+ 8.6 V
(R
DYN
= 0.15 Ω)
Pin 1-2 or Pin 2-1
P1-P3P4-P6

VCUT03E1-SD0HG4-08

Mfr. #:
Buy VCUT03E1-SD0HG4-08
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors BiSy Single +/-30kV AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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