MTB30P06VT4G Datasheet MTB30P06VT4, MTB30P06VT4G | P1-P3

October, 2011 − Rev. 5

1 Publication Order Number:

MTB30P06V/D

MTB30P06V, MTBV30P06V

Power MOSFET

30 Amps, 60 Volts

P−Channel D

2

PAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

Features

• Avalanche Energy Specified

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

• AEC−Q101 Qualified and PPAP Capable − MTBV30P06V

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

C

= 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 Vdc

Drain−to−Gate Voltage (R

GS

= 1.0 MW)

V

DGR

60 Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t

p

≤ 10 ms)

V

GS

V

GSM

± 15

± 25

Vdc

Vpk

Drain Current − Continuous @ 25°C

− Continuous @ 100°C

− Single Pulse (t

p

≤ 10 ms)

I

D

I

D

I

DM

30

19

105

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ T

A

= 25°C

(Note 1)

P

D

125

0.83

3.0

W

W/°C

Operating and Storage Temperature Range T

J

, T

stg

−55 to

175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

J

= 25°C

(V

DD

= 25 Vdc, V

GS

= 10 Vdc, Peak

I

L

= 30 Apk, L = 1.0 mH, R

G

= 25 W)

E

AS

450 mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

R

q

JC

R

q

JA

R

q

JA

1.2

62.5

50

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 seconds

T

L

260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

D

S

G

MARKING DIAGRAM & PIN ASSIGNMENT

MTB

30P06VG

AYWW

1

Gate

4 Drain

2

Drain

3

Source

30 AMPERES, 60 VOLTS

R

DS(on)

= 80 mW

Device Package Shipping

†

ORDERING INFORMATION

D

2

PAK

CASE 418B

STYLE 2

1

P−Channel

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

http://onsemi.com

MTB30P06VT4G D

2

PAK

(Pb−Free)

800 / Tape & Reel

MTB30P06VG D

2

PAK

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MTBV30P06VT4G D

2

PAK

(Pb−Free)

800 / Tape & Reel

MTB30P06V, MTBV30P06V

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(V

GS

= 0 Vdc, I

D

= 0.25 mAdc)

Temperature Coefficient (Positive)

V

(BR)DSS

60

−

62

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(V

DS

= 60 Vdc, V

GS

= 0 Vdc)

(V

DS

= 60 Vdc, V

GS

= 0 Vdc, T

J

= 150°C)

I

DSS

−

10

100

mAdc

Gate−Body Leakage Current (V

GS

= ± 15 Vdc, V

DS

= 0 Vdc) I

GSS

− − 100 nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(V

DS

= V

GS

, I

D

= 250 mAdc)

Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0

−

2.6

5.3

4.0

−

Vdc

mV/°C

Static Drain−Source On−Resistance (V

GS

= 10 Vdc, I

D

= 15 Adc) R

DS(on)

− 0.067 0.08

W

Drain−Source On−Voltage

(V

GS

= 10 Vdc, I

D

= 30 Adc)

(V

GS

= 10 Vdc, I

D

= 15 Adc, T

J

= 150°C)

V

DS(on)

−

2.0

−

2.9

2.8

Vdc

Forward Transconductance

(V

DS

= 8.3 Vdc, I

D

= 15 Adc)

g

FS

5.0 7.9 −

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= 25 Vdc, V

GS

= 0 Vdc, f = 1.0 MHz)

C

iss

− 1562 2190 pF

Output Capacitance C

oss

− 524 730

Transfer Capacitance C

rss

− 154 310

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(V

DD

= 30 Vdc, I

D

= 30 Adc,

V

GS

= 10 Vdc, R

G

= 9.1 W)

t

d(on)

− 14.7 30 ns

Rise Time t

r

− 25.9 50

Turn−Off Delay Time t

d(off)

− 98 200

Fall Time t

f

− 52.4 100

Gate Charge

(See Figure 8)

(V

DS

= 48 Vdc, I

D

= 30 Adc,

V

GS

= 10 Vdc)

Q

T

− 54 80 nC

Q

1

− 9.0 −

Q

2

− 26 −

Q

3

− 20 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(I

S

= 30 Adc, V

GS

= 0 Vdc)

(I

S

= 30 Adc, V

GS

= 0 Vdc, T

J

= 150°C)

V

SD

−

2.3

1.9

3.0

−

Vdc

Reverse Recovery Time

(I

S

= 30 Adc, V

GS

= 0 Vdc,

dI

S

/dt = 100 A/ms)

t

rr

− 175 −

ns

t

a

− 107 −

t

b

− 68 −

Reverse Recovery Stored Charge Q

RR

− 0.965 −

mC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

L

D

− 3.5

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

L

S

− 7.5 − nH

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

MTB30P06V, MTBV30P06V

http://onsemi.com

3

TYPICAL ELECTRICAL CHARACTERISTICS

R

DS(on)

, DRAIN-TO-SOURCE RESISTANCE (OHMS)

R

DS(on)

, DRAIN-TO-SOURCE RESISTANCE

(NORMALIZED)

0246810

0

10

20

30

60

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

I

D

, DRAIN CURRENT (AMPS)

01234 8

0

10

20

30

60

I

D

, DRAIN CURRENT (AMPS)

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

01020304050

0

0.02

0.04

0.06

0.12

R

DS(on)

, DRAIN-TO-SOURCE RESISTANCE (OHMS)

010203040 60

0.04

0.05

0.08

I

D

, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

I

D

, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

-50

0

0.2

0.4

0.6

1.8

0 10203040 70

1

50

10

100

T

J

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

I

DSS

, LEAKAGE (nA)

T

J

= 125°C

100°C

15 V

-25 0 25 50 75 100 150

T

J

= 25°C V

DS

≥ 10 V

T

J

= -55°C

25°C

100°C

T

J

= 100°C

25°C

-55°C

T

J

= 25°C

V

GS

= 0 V

V

GS

= 10V

V

GS

= 10 V

V

GS

= 10 V

V

GS

= 10 V

I

D

= 15 A

40

50

12

7 V

6 V

5 V

4 V

8 V

9 V

40

50

567

0.08

0.1

60

0.06

0.07

50

0.8

1

1.2

1.4

1.6

125

60

175

MTB30P06VT4G

MTB30P06VT4G

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