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PZTA44-G

P1-P3P4-P5
PZTA44-G (NPN)
RoHS Device
General Purpose Transistor
Features
- High collector-emitter voltage.
- Low current.
1
Base
3
Emitter
Collector
2
Diagram
Symbol
Parameter Value
Unit
Maximum Ratings (at TA=25°C unless otherwise noted)
1 : Base
2 : Collector
3 : Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector power dissipation
Junction temperature range
VCBO
VCEO
VEBO
IC
PC
TJ
400
400
6
200
1
150
V
V
V
mA
W
°C
Collector current-pulsed
ICM
300
mA
TSTG
-65 to +150
°C
Storage temperature range
QW-BTR54
Page 1
REV A:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
SOT-223
0.264(6.70)
0.248(6.30)
0.146(3.70)
0.130(3.30)
0.033(0.84)
0.026(0.66)
0.067(1.70)
0.059(1.50)
0.014(0.35)
0.009(0.23)
0.287(7.30)
0.264(6.70)
0.004(0.10)
MIN.
0.030(0.75)
BSC.
0.091(2.30)
0.122(3.10)
0.114(2.90)
0.001(0.02)
Dimensions in inches and (millimeter)
1
2
3
Electrical Characteristics (Ta=25°C, unless otherwise specified)
*Pulse test: pulse width ≤300µs, duty cycle≤2.0%
Symbol
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector capacitance
Base-emitter saturation voltage
Conditions
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
hFE(2)*
CC
VBE(sat)*
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=400V, IE=0
VEB=4V, IC=0
VCE=10V, IC=10mA
VCB=20V, IE=0, f=1MHZ
IC=10mA, IB=1mA
400
400
6
50
0.1
0.1
200
7
0.75
Min.
Max.
V
V
V
μA
μA
pF
V
DC current gain
hFE(1)*
VCE=10V, IC=1mA
40
hFE(3)*
VCE=10V, IC=50mA
45
hFE(4)*
VCE=10V, IC=100mA
40
VCE(sat)2*
IC=10mA, IB=1mA
0.5
Collector-emitter saturation voltage
VCE(sat)1*
IC=1mA, IB=0.1mA
0.4
VCE(sat)3*
IC=50mA, IB=5mA
0.75
Emitter capacitance
Ce
VEB=0.5V, IC=0, f=1MHZ
130
pF
V
V
V
Transition frequency
fT
VCE=10V, IC=10mA, f=100MHZ
20
MHz
Parameter
General Purpose Transistor
Page 2
REV A:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
RATING AND CHARACTERISTIC CURVES (PZTA44-G)
Transition Frequency, fT (MHZ)
Collector current, Ic (mA)
VCE = 10V
Ta=25°C
Fig.1 - fT — IC
2
10
50
10
100
200
Common Emitter
QW-BTR54
RATING AND CHARACTERISTIC CURVES (PZTA44-G)
Collector Current , Ic (mA)
DC Current Gain, hFE
0.1
1
10 100
10
100
500
100
Collector Current, Ic (mA)
1
0.6
0
Fig.5 - VCEsat — IC
1.0
Fig.2 - Static Characteristic
Collector Current, Ic (mA)
Fig.3 - hFE — IC
10
β=10
0.8
0.4
0.2
Collector Current, Ic (mA)
Fig.4 - VBEsat — IC
Voltage, VBEsat (V)
BASE-Emitter Saturation
Capacitance, C (pF)
Fig PC.7 - — Ta
Ambient Temperature, Ta (°C)
Collector Power Dissipation, Pc (mW)
0 50
75
100 125 150
0
400
800
1000
1200
600
200
Fig.6 - Cob/Cib — VCB/VEB
Reverse Voltge, (V)
10
0.1
1
20
10
1
500
100
f=1MHZ
IE=0/IC=0
Ta=25°C
Voltage, VCEsat (mV)
Collector-Emitter Saturation
Collector-Emitter Voltage, VCE (V)
0
15
20
30
0 5 10 15 25
25
10
5
IB=20uA
40uA
60uA
80uA
100uA
20
-500uA
-450uA
COMMON
EMITTER
Ta=25°C
120uA
140uA
160uA
180uA
200uA
300
300
Ta=100°C
Ta= 25°C
100
1
100
10
2000
10
1000
300
β=10
Ta=100°C
Ta= 25°C
25
Cob
Cib
Ta=100°C
Ta= 25°C
-500uA
-450uA
COMMON
EMITTER
VCE=10V
General Purpose Transistor
Page 3
REV A:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR54
P1-P3P4-P5

PZTA44-G

Mfr. #:
Buy PZTA44-G
Manufacturer:
Comchip Technology
Description:
Bipolar Transistors - BJT NPN TRANISTOR 200MA 400V
Lifecycle:
New from this manufacturer.
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