VS-ST173C Series
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Vishay Semiconductors
Revision: 16-Dec-13
5
Document Number: 94366
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
2000
2500
3000
3500
4000
4500
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM
applied following surge.
ST173C..C Series
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
1500
2000
2500
3000
3500
4000
4500
5000
No voltage reapplied
Rated V
RRM
reapplied
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
ST173C..C Series
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST173C..C Series
T
J
= 25 °C
T
J
= 125 °C
0.01 0.1 1 100.001
1
Square Wave Pulse Duration (s)
Transient Thermal
Impedance Z
thJ-hs
(K/W)
0.001
0.01
0.1
ST173C..C Series
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
200 40 60 80 100
dI/dt - Rate of Fall of On-State Current (A/µs)
Q
rr
- Maximum Reverse
Recovery Charge (µC)
0
50
100
150
200
250
ST173C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
20
0
200 40 60 80 100
40
60
80
100
120
140
160
dI/dt - Rate of Fall of Forward Current (A/µs)
I
rr
- Maximum Reverse
Recovery Current (A)
ST173C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A