VS-ST173C12CFP0

VS-ST173C Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
4
Document Number: 94366
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
0
200
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
40
80
240120 160
40
50
60
70
80
90
100
110
120
130
ST173C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Conduction angle
60°
30°
90°
120°
180°
0
250 300 350
Average On-state Current (A)
50 150
100 200
Maximum Allowable
Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
ST173C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Conduction period
30° 60°
90°
120°
180°
DC
0
250 300 350 400
Average On-State Current (A)
50 150
100 200
Maximum Allowable
Heatsink Temperature (°C)
30
40
50
60
70
80
90
100
110
120
130
30°
60°
90°
120°
180°
ST173C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
Ø
Conduction angle
Average On-State Current (A)
Maximum Allowable
Heatsink Temperature (°C)
0
500 600 700
100 300
200 400
20
30
40
50
60
70
80
90
100
110
120
130
ST173C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
Ø
Conduction period
DC
30°
60°
90°
120°
180°
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0
100
200
300
400
500
600
700
800
900
1000
RMS limit
0
250 300 350 400 450
50 150
100 200
180°
120°
90°
60°
30°
Ø
Conduction angle
ST173C..C Series
T
J
= 125 °C
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0
200
400
600
800
1000
1200
1400
0
300 400 500 600 700
100 200
DC
180°
120°
90°
60°
30°
RMS limit
ST173C..C Series
T
J
= 125 °C
Ø
Conduction period
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
5
Document Number: 94366
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
2000
2500
3000
3500
4000
4500
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM
applied following surge.
ST173C..C Series
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
1500
2000
2500
3000
3500
4000
4500
5000
No voltage reapplied
Rated V
RRM
reapplied
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
ST173C..C Series
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST173C..C Series
T
J
= 25 °C
T
J
= 125 °C
0.01 0.1 1 100.001
1
Square Wave Pulse Duration (s)
Transient Thermal
Impedance Z
thJ-hs
(K/W)
0.001
0.01
0.1
ST173C..C Series
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
200 40 60 80 100
dI/dt - Rate of Fall of On-State Current (A/µs)
Q
rr
- Maximum Reverse
Recovery Charge (µC)
0
50
100
150
200
250
ST173C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
20
0
200 40 60 80 100
40
60
80
100
120
140
160
dI/dt - Rate of Fall of Forward Current (A/µs)
I
rr
- Maximum Reverse
Recovery Current (A)
ST173C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
6
Document Number: 94366
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 47 Ω
C
s
= 0.22 µF
V
D
= 80 % V
DRM
t
p
ST173C..C Series
Sinusoidal pulse
T
C
= 40 °C
50 Hz
100
200
500
400
1000
1500
2500
3000
5000
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST173C..C Series
Sinusoidal pulse
T
C
= 55 °C
50 Hz
100
500
400
1000
1500
2500
3000
5000
Snubber circuit
R
s
= 47 Ω
C
s
= 0.22 µF
V
D
= 80 % V
DRM
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 47 Ω
C
s
= 0.22 µF
V
D
= 80 % V
DRM
ST173C..C Series
Trapezoidal pulse
T
C
= 40 °C
dI/dt = 50 A/µs
t
p
5000
2500
1500
1000
400
200
100
50 Hz
3000
500
2000
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
ST173C..C Series
Trapezoidal pulse
T
C
= 40 °C
dI/dt = 100 A/µs
t
p
50 Hz
100
200
400
500
1000
1500
2500
3000
5000
10 000
10
Snubber circuit
R
s
= 47 Ω
C
s
= 0.22 µF
V
D
= 80 % V
DRM

VS-ST173C12CFP0

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1200 Volt 330 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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