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IPB45N06S3-16
P1-P3
P4-P6
P7-P9
IPB45N06S3-16
IPI45N06S3-16, IPP45N06S3-16
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
);
V
GS
≥
6 V
I
D
=f(
T
C
);
V
GS
≥
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
1
10
100
0.1
1
10
100
V
DS
[V]
I
D
[A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
1
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
0
10
20
30
40
50
60
70
0
50
100
150
200
T
C
[°C]
P
tot
[W]
0
10
20
30
40
50
0
50
100
150
200
T
C
[°C]
I
D
[A]
Rev. 1.1
page 4
2007-11-07
IPB45N06S3-16
IPI45N06S3-16, IPP45N06S3-16
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
, pulsed
parameter:
V
GS
7 Typ. transfer characteristics
8 Drain-source on-state resistance
I
D
=f(
V
GS
);
V
DS
=10 V
R
DS(on)
=f(
T
j
);
I
D
=20 A;
V
GS
=10 V
parameter:
T
j
7 V
8 V
9 V
10 V
10
15
20
25
30
0
2
04
06
08
0
1
0
0
I
D
[A]
R
DS(on)
[m
Ω
]
5.5 V
6 V
6.5 V
7 V
8 V
10 V
0
10
20
30
40
50
60
70
80
90
0
5
10
15
V
DS
[V]
I
D
[A]
5
10
15
20
25
-60
-20
20
60
100
140
180
T
j
[°C]
R
DS(on)
[m
Ω
]
25 °C
175 °C
-55 °C
0
25
50
75
100
2345678
V
GS
[V]
I
D
[A]
Rev. 1.1
page 5
2007-11-07
IPB45N06S3-16
IPI45N06S3-16, IPP45N06S3-16
9 Typ. gate threshold voltage
10 Typ. capacitances
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
parameter:
I
D
11 Forward characteristics of reverse diode
12 Typ. avalanche characteristics
I
F
=f(
V
SD
), pulsed
I
AS
=f(
t
AV
)
parameter:
T
j
parameter:
T
j(start)
25°C
100°C
150°C
0.1
1
10
100
0.1
1
10
100
1000
t
AV
[µs]
I
AV
[A]
Ciss
Coss
Crss
10
4
10
3
10
2
0
5
10
15
20
25
30
V
DS
[V]
C
[pF]
30µA
300µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60
-20
20
60
100
140
180
T
j
[°C]
V
GS(th)
[V]
25 °C
175 °C
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
SD
[V]
I
F
[A]
Rev. 1.1
page 6
2007-11-07
P1-P3
P4-P6
P7-P9
IPB45N06S3-16
Mfr. #:
Buy IPB45N06S3-16
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 45A TO-263
Lifecycle:
New from this manufacturer.
Delivery:
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