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BYG24D-E3/TR

P1-P3P4-P4
BYG24D-E3/HE3, BYG24G-E3/HE3, BYG24J-E3/HE3
www.vishay.com
Vishay General Semiconductor
Revision: 21-Aug-13
1
Document Number: 88960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristics
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
200 V, 400 V, 600 V
I
FSM
30 A
I
R
1.0 μA
V
F
1.25 V
t
rr
140 ns
E
R
20 mJ
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variation Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG24D BYG24G BYG24J UNIT
Device marking code BYG24D BYG24G BYG24J
Maximum repetitive peak reverse voltage V
RRM
200 400 600 V
Average forward current at T
A
= 65 °C I
F(AV)
1.5 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
BYG24D-E3/HE3, BYG24G-E3/HE3, BYG24J-E3/HE3
www.vishay.com
Vishay General Semiconductor
Revision: 21-Aug-13
2
Document Number: 88960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
Mounted on epoxy-glass hard tissue 35 μm x 17 mm
2
cooper area per electrode
(2)
Mounted on epoxy-glass hard tissue 35 μm x 50 mm
2
cooper area per electrode
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG24D BYG24G BYG24J UNIT
Minimum breakdown voltage I
R
= 100 μA V
BR
200 400 600 V
Maximum instantaneous
forward voltage
I
F
= 1 A
T
J
= 25 °C V
F
(1)
1.15
V
I
F
= 1.5 A 1.25
Maximum reverse current V
R
= V
RRM
T
J
= 25 °C
I
R
1
µA
T
J
= 100 °C 10
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
140 ns
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG24D BYG24G BYG24J UNIT
Junction to case R
JC
25 °C/W
Maximum thermal resistance, junction to ambient
R
JA
(1)
150
°C/W
R
JA
(2)
125
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG24D-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG24D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG24DHE3/TR
(1)
0.064 TR 1800 7" diameter plastic tape and reel
BYG24DHE3/TR3
(1)
0.064 TR3 7500 13" diameter plastic tape and reel
0
10
20
30
40
50
60
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
125 K/W
155 K/W
175 K/W
R
θJA
=
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperat
u
re (°C)
V
R
= V
RRM
BYG24D-E3/HE3, BYG24G-E3/HE3, BYG24J-E3/HE3
www.vishay.com
Vishay General Semiconductor
Revision: 21-Aug-13
3
Document Number: 88960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Ambient Temperature (°C)
Average Forward Cu
rrent (A)
100806040200 120 140 160
V
R
= V
RRM
Half Sine-Wave
R
θJA
= 25 K/W
R
θJA
= 125 K/W
R
θJA
= 150 K/W
0
5
10
15
20
25
30
0.1 1 10 100
Reverse Voltage (V)
Diode Capacitance (pF)
f = 1 MHz
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
P1-P3P4-P4

BYG24D-E3/TR

Mfr. #:
Buy BYG24D-E3/TR
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.5A 200 Volt 140ns
Lifecycle:
New from this manufacturer.
Delivery:
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