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AMMP-6120-TR2

P1-P3P4-P6P7-P7
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A) = 40V
ESD Human Body Model (Class 1A) = 250V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Pin Function
1 Vd
2 Vg
3
4 RF Out
5
6
7
8 RF In
Description
Avago Technologies’ AMMP-6120 is an easy-to-use in-
tegrated frequency multiplier (x2) in a surface mount
package designed for commercial communication
systems. The MMIC takes a 4 to 12 GHz input signal and
doubles it to 8 to 24 GHz. It has integrated amplification,
matching, harmonic suppression, and bias networks. The
input/output are matched to 50 Ω and fully DC blocked.
The MMIC is fabricated using PHEMT technology.
The backside of the package is both RF and DC ground.
This helps simplify the assembly process and reduces
assembly related performance variations and costs. The
surface mount package allows elimination of “chip & wire”
assembly for lower cost. This MMIC is a cost effective al-
ternative to hybrid (discrete-FET), passive, and diode
doublers that require complex tuning and assembly pro-
cesses.
Package Diagram
Features
• 5x5mm Surface Mount Package
• Frequency Range : 8-24 GHz output
(Useable to 26 GHz)
• Broad input power range: -11 to +5 dBm
• Output Power : +16 to +18 dBm
• Harmonic Suppression : 20 dBc (Fundamental)
• DC requirements : -1.4V and 5V, 112 mA @ Pin=
+3dBm
Applications
• Microwave Radio systems
• Satellite VSAT and DBS systems
• 802.16 & 802.20 WiMax BWA systems
• WLL and MMDS loops
Functional Block Diagram
AMMP-6120
8-24 GHz x2 Frequency Multiplier
Data Sheet
1 2 3
7 56
4
8RF IN
RF OUT
VgVd
NC
NCNC
NC
Note: MSL Rating = Level 2A
top view
package base: RF and DC GND
3
Vg
2
7 56
RFin 8
4 RFout
X2
Vd
1
2
Electrical Specications
1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.
2. Pre-assembly into package performance veried 100% on-wafer.
3. This nal package part performance is veried by a functional test correlated to actual performance at one or more
frequencies.
4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
Table 1. RF Electrical Characteristics
TA=25°C, Vd=50V, Vg=-1.4V, Idq=85mA, Zin=Zout=50 Ω
Parameter Min Typ. Max Unit
Output Power, Pout 13 16 dBm
Input Power at 1dB Gain Compression,
IP-1dB
2 dBm
Input Return Loss, RLin -15 dB
Output Return Loss, RLout -10 dB
Fundamental Suppresion, Sup 18 25 dBc
3rd Harmonic Suppression, Sup3 25 dBc
4th Harmonic Suppression, Sup4 35 dBc
Single Side Band Phase Noise, SSBPN
(@100kHz oset, fout=15.6GHz)
-140 dBc
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Re-
sistance at backside temperature (Tb) = 25°C calculated from measured data.
Description Min. Typical Max. Unit Comments
Drain Supply Current, Id 85 110 mA Vd = 5V, Under any RF power
drive and temperature
Gate Current, Ig 9 uA
Table 3. Thermal Properties
Parameter Test Conditions Value
Thermal Resistance, qch-b
Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C
Thermal Resistance at backside temperature Tb=25°C
qch-b = 34 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description Min. Max. Unit Comments
Drain Supply Voltage, Vd 7 V
Gate Supply Voltage, Vg -3.0 +0.5 V
Drain Current, Idq 120 mA
CW Input Power, Pin 15 dBm
Channel Temperature, Tch +150 °C
Storage Temperature , Tstg -65 +150 °C
Maximum Assembly Temperature, Tmax +300 °C 60 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
3
AMMP-6120 Typical Performances
(T
A
= 25°C,Z
in
= Z
out
= 50 Ω, Vd=5V, Vg=-1.4V)
Figure 3. Output Power [2H] vs. Output Freq. at variable Pin Figure 4. Fundamental Suppression at variable Pin
Figure 1. Output Power vs. Output Freq. @ Pin=+3dBm
Figure 6. Variation of total drain current with input power
Figure 2. Output Power vs. Output Freq. over temp @ Pin=+3dBm
Figure 5. Input and Output Return Loss
-30
-25
-20
-15
-10
-5
0
5
10
15
20
8 10 12 14 16 18 20 22 24 26
Output Frequency (GHz)
Output Power (dBm)
2H
1H
3H
4H
-30
-25
-20
-15
-10
-5
0
5
10
15
20
8 10 12 14 16 18 20 22 24 26
Output Frequency (GHz)
Output Power (dBm)
-40°C [2H]
+25°C [2H]
+85°C [2H]
-40°C [1H]
+25°C [1H]
+85°C [1H]
10
11
12
13
14
15
16
17
18
19
8 10 12 14 16 18 20 22 24 26
Output Frequency (GHz)
Output Power [2H] (dBm)
Pin=-2dBm
Pin= 0dBm
Pin=+2dBm
Pin=+4dBm
10
15
20
25
30
35
40
8 10 12 14 16 18 20 22 24 26
Output Frequency [GHz]
Suppression [1H] (dBc)
Pin=-2dBm
Pin= 0dBm
Pin=+2dBm
Pin=+4dBm
-30
-25
-20
-15
-10
-5
0
4 6 8 10 12 14 16 18 20 22 24 26
Frequncy (GHz)
I/P & O/P Return Loss (dB)
S11
S22
80
90
100
110
120
130
140
150
160
-11 -9 -7 -5 -3 -1 1 3 5 7 9 11
Input Power [1H] (dBm)
Total Drain Current [Id] (mA)
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
P1-P3P4-P6P7-P7

AMMP-6120-TR2

Mfr. #:
Buy AMMP-6120-TR2
Manufacturer:
Broadcom / Avago
Description:
IC MMIC FREQ MULT 8-24GHZ 8-SMD
Lifecycle:
New from this manufacturer.
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