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STTH112U

P1-P3P4-P6P7-P8
October 2009 Doc ID 9343 Rev 5 1/8
8
STTH112
High voltage ultrafast rectifier
Features
■ Low forwarded voltage drop
■ High reliability
■ High surge current capability
■ Soft switching for reduced EMI disturbances
■ Planar technology
Description
The STTH112, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications
Table 1. Device summary
Symbol Value
I
F(AV)
1 A
V
RRM
1200 V
T
j (max)
175 °C
V
F (max)
1.65 V
DO-41
STTH112
SMA
STTH112A
SMB
STTH112U
www.st.com
Electrical characteristics STTH112
2/8 Doc ID 9343 Rev 5
1 Electrical characteristics
Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
V
(RMS)
Voltage rms 850 V
I
F(AV)
Average forward current
Tl = 85°C δ =0.5 DO-41
1ATl = 115°C δ =0.5 SMA
Tl = 125°C δ =0.5 SMB
I
FSM
Forward surge current t = 8.3 ms
DO-41 20
ASMA
18
SMB
T
stg
Storage temperature range - 50 + 175 °C
T
j
Maximum operating junction temperature + 175 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead
L = 10 mm DO-41 45
°C/W
SMA 30
SMB 25
R
th (j-a)
Junction to ambient L = 10 mm DO-41 110
Table 3. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current V
R
= 1200 V
T
j
= 25 °C 5
µA
T
j
= 125 °C 50
V
F
Forward voltage drop I
F
= 1 A
T
j
= 25 °C 1.9
VT
j
= 125 °C 1.17 1.65
T
j
= 150 °C 1.10 1.55
Table 4. Dynamic electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 0.5 A
I
rr
= 0.25 A I
R
= 1A
T
j
= 25 °C 75 ns
t
fr
Forward recovery time I
F
= 1 A
dI
F
/dt = 50 A/µs
V
FR
= 1.1 x V
Fmax
T
j
= 25 °C
500 ns
V
FP
Forward recovery voltage 30 V
STTH112 Electrical characteristics
Doc ID 9343 Rev 5 3/8
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus
forward current
P(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ = 1
δ = 0.05
δ = 0.5
δ = 0.2
δ = 0.1
I (A)
F(AV)
T
δ
=tp/T
tp
I (A)
FM
0.1
1.0
10.0
100.0
0
.
00
.
5
1.
0
1.
5
2.
0
2.
53
.
03
.
5
4.
0
4.
55
.
0
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-41)
Figure 4. Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
epoxy FR4, L = 10mm
leads
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
T
δ
=tp/T
tp
t (s)
p
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
Figure 5. Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4)(SMB)
Figure 6. Thermal resistance junction to
ambient versus copper surface
under each lead (DO-41, SMB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
R (°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
012345678910
S(cm²)
DO-41
L =10mm
leads
SMB
epoxy printed circuit board FR4, copper thickness: 35µm
P1-P3P4-P6P7-P8

STTH112U

Mfr. #:
Buy STTH112U
Manufacturer:
STMicroelectronics
Description:
Rectifiers 1.0 Amp 1200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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