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V10DM100CHM3/I

P1-P3P4-P5
V10DM100C
www.vishay.com
Vishay General Semiconductor
Revision: 27-Nov-17
1
Document Number: 87574
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.5 V at I
F
= 2.5 A
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, industrial, and
automotive application.
MECHANICAL DATA
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: as marked
Notes
(1)
Mounted on infinite heatsink
(2)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5 A
V
RRM
100 V
I
FSM
80 A
V
F
at I
F
= 5 A (T
A
= 125 °C) 0.62 V
T
J
max. 175 °C
Package SMPD (TO-263AC)
Diode variations Common cathode
V10DM100C
Top View Bottom View
PIN 1
K
HEATSINK
PIN 2
TMBS
®
eSMP
®
Series
SMPD (TO-263AC)
K
1
2
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10DM100C UNIT
Device marking code V10DM100C
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
(1)
10
A
per diode 5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Operating junction temperature range T
J
(2)
-40 to +175
°C
Storage temperature range T
STG
-55 to +175
V10DM100C
www.vishay.com
Vishay General Semiconductor
Revision: 27-Nov-17
2
Document Number: 87574
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
Mounted on infinite heatsink
(2)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
- junction-to-ambient
(3)
Free air, without heatsink
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 2.5 A
T
A
= 25 °C
V
F
(1)
0.58 -
V
I
F
= 5 A 0.71 0.79
I
F
= 2.5 A
T
A
= 125 °C
0.50 -
I
F
= 5 A 0.62 0.70
Reverse current at rated V
R
per diode
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
0.01 -
mA
T
A
= 125 °C 0.70 -
V
R
= 100 V
T
A
= 25 °C - 0.1
T
A
= 125 °C 1.4 4.0
Typical junction capacitance 4.0 V, 1 MHz C
J
480 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10DM100C UNIT
Typical thermal resistance per device
R
JC
(1)
2.5
°C/W
R
JA
(2)(3)
58
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
V10DM100C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel
V10DM100CHM3/I
(1)
0.55 I 2000/reel 13" diameter plastic tape and reel
V10DM100C
www.vishay.com
Vishay General Semiconductor
Revision: 27-Nov-17
3
Document Number: 87574
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
2
4
6
8
10
12
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Case Temperature (°C)
R
thJC
= 2.5 °C/W
R
thJA
= 58 °C/W
0
1
2
3
4
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = t
p
/T
T
t
p
D = 0.8
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 150 °C
T
J
= 175 °C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= -40 °C
T
J
= 125 °C
T
J
= 175 °C
Instantaneous Reverse Current (mA)
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.1
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction-to-ambient
P1-P3P4-P5

V10DM100CHM3/I

Mfr. #:
Buy V10DM100CHM3/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 100V 10A SMPD(TO-263AC)
Lifecycle:
New from this manufacturer.
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