OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MMBTA92LT3

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 5
1 Publication Order Number:
MMBTA92LT1/D
MMBTA92LT1,
MMBTA93LT1
Preferred Device
High Voltage Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol 92 93 Unit
Collector−Emitter Voltage V
CEO
−300 −200 Vdc
Collector−Base Voltage V
CBO
−300 −200 Vdc
Emitter−Base Voltage V
EBO
−5.0 −5.0 Vdc
Collector Current — Continuous I
C
−500 mAdc
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
JA
556 °C/W
Total Device Dissipation (Note 2)
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
†
ORDERING INFORMATION
MMBTA92LT1 SOT−23 3000 / Tape & Reel
MMBTA92LT1G SOT−23
(Pb−Free)
SOT−23 (TO−236AF)
CASE 318
Style 6
3000 / Tape & Reel
MARKING
DIAGRAM
2x
2x = Specific Device Code
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
MMBTA92LT3 SOT−23 10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA93LT1 SOT−23 3000 / Tape & Reel
MMBTA93LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBTA92LT1, MMBTA93LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0) MMBTA92
MMBTA93
V
(BR)CEO
−300
−200
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= −100 Adc, I
E
= 0) MMBTA92
MMBTA93
V
(BR)CBO
−300
−200
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 Adc, I
C
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector Cutoff Current
(V
CB
= −200 Vdc, I
E
= 0) MMBTA92
(V
CB
= −160 Vdc, I
E
= 0) MMBTA93
I
CBO
−
−
−0.25
−0.25
Adc
Emitter Cutoff Current
(V
EB
= −3.0 Vdc, I
C
= 0)
I
EBO
− −0.1 Adc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc) Both Types
(I
C
= −10 mAdc, V
CE
= −10 Vdc) Both Types
(I
C
= −30 mAdc, V
CE
= −10 Vdc) MMBTA92
MMBTA93
h
FE
25
40
25
25
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc) MMBTA92
MMBTA93
V
CE(sat)
−
−
−0.5
−0.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
BE(sat)
− −0.9 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
50 − MHz
Collector−Base Capacitance
(V
CB
= −20 Vdc, I
E
= 0, f = 1.0 MHz) MMBTA92
MMBTA93
C
cb
−
−
6.0
8.0
pF
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
MMBTA92LT1, MMBTA93LT1
http://onsemi.com
3
Figure 1. DC Current Gain
Figure 2. Capacitance
I
C
, COLLECTOR CURRENT (mA)
150
90
70
50
30
10
T
J
= 25°C
V
CE
= 20 Vdc
F = 20 MHz
f, CURRENT−GAIN  BANDWIDTH (MHz)
T
1
Figure 3. Current−Gain − Bandwidth
130
21
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10
1000
C
ib
@ 1MHz
100
1.0
C
cb
@ 1MHz
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
110
3579
1917151311
V
BE(on)
@ 25°C, V
CE
= 10 V
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ −55°C, V
CE
= 10 V
Figure 4. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
300
0.1 1.0
10
250
200
150
0
h
FE
, DC CURRENT GAIN
T
J
= +125°C
25°C
−55°C
V
CE
= 10 Vdc
100
50
100
P1-P3P4-P4

MMBTA92LT3

Mfr. #:
Buy MMBTA92LT3
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 300V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet