2PB710AXL_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 29 October 2008 3 of 9
NXP Semiconductors
2PB710ARL; 2PB710ASL
50 V, 500 mA PNP general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −60 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −500 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −1A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 500 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −60 V; I
E
=0A - - −10 nA
V
CB
= −60 V; I
E
=0A;
T
j
= 150 °C
--−5 µA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
=0A - - −10 nA
h
FE
DC current gain V
CE
= −10 V;
I
C
= −500 mA
[1]
40 - -
h
FE
group R V
CE
= −10 V;
I
C
= −150 mA
[1]
120 - 240
h
FE
group S V
CE
= −10 V;
I
C
= −150 mA
[1]
170 - 340
V
CEsat
collector-emitter saturation
voltage
I
C
= −300 mA;
I
B
= −30 mA
[1]
--−600 mV
