AT49BV008A(T)/8192A(T)
4
RESET: A RESET
input pin is provided to ease some sys-
tem applications. When RESET
is at a logic high level, the
device is in its standard operating mode. A low level on the
RESET
input halts the present device operation and puts
the outputs of the device in a high-impedance state. When
a high level is reasserted on the RESET
pin, the device
returns to the read or standby mode, depending upon the
state of the control inputs. By applying a 12V
± 0.5V input
signal to the RESET
pin the boot block array can be repro-
grammed even if the boot block program lockout feature
has been enabled (see Boot Block Programming Lockout
Override section).
ERASURE: Before a byte or word can be reprogrammed, it
must be erased. The erased state of memory bits is a logic
1. The entire device can be erased by using the Chip
Erase command or individual sectors can be erased by
using the Sector Erase commands.
CHIP ERASE: The entire device can be erased at one time
by using the 6-byte chip erase software code. After the chip
erase has been initiated, the device will internally time the
erase operation so that no external clocks are required.
The maximum time to erase the chip is t
EC
.
If the boot block lockout has been enabled, the chip erase
will not erase the data in the boot block; it will erase the
main memory block and the parameter blocks only. After
the chip erase, the device will return to the read or standby
mode.
SECTOR ERASE: As an alternative to a full chip erase, the
device is organized into four sectors that can be individually
erased. There are two 4K word parameter block sections,
one boot block, and the main memory array block. The
Sector Erase command is a six-bus cycle operation. The
sector address is latched on the falling WE
edge of the
sixth cycle while the 30H data input command is latched at
the rising edge of WE
. The sector erase starts after the ris-
ing edge of WE
of the sixth cycle. The erase operation is
internally controlled; it will automatically time to completion.
Whenever the main memory block is erased and repro-
grammed, the two parameter blocks should be erased and
reprogrammed before the main memory block is erased
again. Whenever a parameter block is erased and repro-
grammed, the other parameter block should be erased and
reprogrammed before the first parameter block is erased
again. Whenever the boot block is erased and repro-
grammed, the main memory block and the parameter block
should be erased and reprogrammed before the boot block
is erased again.
BYTE/WORD PROGRAMMING: Once a memory block is
erased, it is programmed (to a logic 0) on a byte-by-byte
or word-by-word basis. Programming is accomplished via
the internal device command register and is a four-bus
cycle operation. The device will automatically generate the
required internal program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset hap-
pens during programming, the data at the location being
programmed will be corrupted. Please note that a data 0
cannot be programmed back to a 1; only erase operations
can convert 0s to 1s. Programming is completed after
the specified t
BP
cycle time. The Data Polling feature may
also be used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K words. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot blocks usage as a write protected region is
optional to the user. The address range of the boot block is
00000H to 03FFFH for the AT49BV008A; FC000H to
FFFFFH for the AT49BV008AT; 00000H to 01FFFH for the
AT49BV8192A; and 7E000H to 7FFFFH for the
AT49BV8192AT.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed when input levels of
5.5V or less are used. Data in the main memory block can
still be changed through the regular programming method.
To activate the lockout feature, a series of six program
commands to specific addresses with specific data must be
performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from the fol-
lowing address location will show if programming the boot
block is locked out 00002H for the AT49BV008A and
AT49BV8192A; FC002H for the AT49BV008AT; and
7E002H for the AT49BV8192AT. If the data on I/O0 is low,
the boot block can be programmed; if the data on I/O0 is
high, the program lockout feature has been enabled and
the block cannot be programmed. The software product
identification exit code should be used to return to standard
operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE:
The user can override the boot block programming lockout
by taking the RESET
pin to 12 volts during the entire chip
erase, sector erase or word programming operation. When
the RESET
pin is brought back to TTL levels the boot block
programming lockout feature is again active.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
AT49BV008A(T)/8192A(T)
5
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes on page 8 (for hard-
ware operation) or Software Product Identification
Entry/Exit on page 13. The manufacturer and device code
is the same for both modes.
DATA
POLLING: The AT49BV008A(T)/8192A(T) features
Data
Polling to indicate the end of a program cycle. During
a program cycle an attempted read of the last byte loaded
will result in the complement of the loaded data on I/O7.
Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. During a
chip or sector erase operation, an attempt to read the
device will give a 0 on I/O7. Once the program or erase
cycle has completed, true data will be read from the device.
Data
Polling may begin at any time during the program
cycle.
TOGGLE BIT: In addition to Data
Polling, the
AT49BV008A(T)/8192A(T) provides another method for
determining the end of a program or erase cycle. During a
program or erase operation, successive attempts to read
data from the device will result in I/O6 toggling between
one and zero. Once the program cycle has completed, I/O6
will stop toggling and valid data will be read. Examining the
toggle bit may begin at any time during a program cycle.
READY/BUSY
: For the AT49BV008A(T), pin 12 is an
open-drain Ready/Busy
output pin that provides another
method of detecting the end of a program or erase opera-
tion. RDY/BUSY
is actively pulled low during the internal
program and erase cycles and it is released at the comple-
tion of the cycle. The open-drain connection allows for OR-
tying of several devices to the same RDY/BUSY
line.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the
AT49BV008A(T)/8192A(T) in the following ways: (a) V
CC
sense: if V
CC
is below 1.8V (typical), the program function
is inhibited. (b) V
CC
power on delay: once V
CC
has reached
the V
CC
sense level, the device will automatically time-out
10 ms (typical) before programming. (c) Program inhibit:
holding any one of OE
low, CE high or WE high inhibits
program cycles. (d) Noise filter: pulses of less than 15 ns
(typical) on the WE
or CE inputs will not initiate a program
cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE
,
CE
and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to V
CC
+ 0.6V.
AT49BV008A(T) ALTERNATE PIN DEFINITION: Two
AT49BV008A(T) BGA pin definitions are shown. The stan-
dard pin definition allows use of the JEDEC standard pro-
gramming algorithm. If the alternate pin definition is used,
the programming algorithm must be modified as shown in
the Command Definition for Alternate Pin Definition table
on page 7.
AT49BV008A(T)/8192A(T)
6
Notes: 1. The DATA FORMAT in each bus cycle is as follows: I/O15 - I/O8 (Dont Care); I/O7 - I/O0 (Hex)
The ADDRESS FORMAT in each bus cycle is as follows: A15 - A0 (Hex), A-1, and A15 - A18 (Dont Care)
2. The boot sector has the address range
00000H to 03FFFH for the AT49BV008A; FC000H to FFFFFH for the
AT49BV008AT; 00000H to 01FFFH for the AT49BV8192A; and 7E000H to 7FFFFH for the AT49BV8192AT
.
3. Either one of the Product ID Exit commands can be used.
4. SA = sector addresses: (A0 - A18)
For the AT49BV008A/8192A
SA = 01XXX for BOOT BLOCK
SA = 02XXX for PARAMETER BLOCK 1
SA = 03XXX for PARAMETER BLOCK 2
SA = 7FXXX for MAIN MEMORY ARRAY
For the AT49BV008AT/8192AT
SA = 7FXXX for BOOT BLOCK
SA = 7DXXX for PARAMETER BLOCK 1
SA = 7CXXX for PARAMETER BLOCK 2
SA = 7BXXX for MAIN MEMORY ARRAY
Command Definition in Hex
(1)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read 1 Addr D
OUT
Chip Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
Sector Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA
(4)
30
Byte/Word Program 4 5555 AA 2AAA 55 5555 A0 Addr D
IN
Boot Block Lockout
(2)
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID Entry 3 5555 AA 2AAA 55 5555 90
Product ID Exit
(3)
3 5555 AA 2AAA 55 5555 F0
Product ID Exit
(3)
1xxxxF0
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
CC
+ 0.6V
Voltage on RESET
with Respect to Ground ...................................-0.6V to +13.5V

AT49BV8192A-11CI

Mfr. #:
Manufacturer:
Description:
IC FLASH 8M PARALLEL 48CBGA
Lifecycle:
New from this manufacturer.
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